Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal alpha-In2Se3

doi:10.1021/acsnano.8b02152

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	Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal alpha-In2Se3
	Xue, F 1; Zhang, JW ; Hu, WJ ; Hsu, WT ; Han, A ; Leung, SF ; Huang, JK ; Wan, Y ; Liu, SH ; Zhang, JL
刊名	ACS NANO
	2018-05-01
卷号	12 期号:5 页码:4976-4983
关键词	multidirection piezoelectricity van der Waals crystal monolayer and bulk nanogenerator and electronic skin
ISSN号	1936-0851
DOI	10.1021/acsnano.8b02152
英文摘要	Piezoelectric materials have been widely used for sensors, actuators, electronics, and energy conversion. Two-dimensional (2D) ultrathin semiconductors, such as monolayer h-BN and MoS2 with their atom-level geometry, are currently emerging as new and attractive members of the piezoelectric family. However, their piezoelectric polarization is commonly limited to the in-plane direction of odd-number ultrathin layers, largely restricting their application in integrated nanoelectromechanical systems. Recently, theoretical calculations have predicted the existence of out-of-plane and in-plane piezoelectricity in monolayer alpha-In2Se3. Here, we experimentally report the coexistence of out-of-plane and in-plane piezoelectricity in monolayer to bulk alpha-In2Se3, attributed to their noncentrosymmetry originating from the hexagonal stacking. Specifically, the corresponding d(33) piezoelectric coefficient of alpha-In2Se3 increases from 0.34 pm/V (monolayer) to 5.6 pm/V (bulk) without any odd even effect. In addition, we also demonstrate a type of alpha-In2Se3-based flexible piezoelectric nanogenerator as an energy-harvesting cell and electronic skin. The out-of-plane and in-plane piezoelectricity in alpha-In2Se3 flakes offers an opportunity to enable both directional and nondirectional piezoelectric devices to be applicable for self-powered systems and adaptive and strain tunable electronics/optoelectronics.
学科主题	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
语种	英语
WOS记录号	WOS:000433404500098
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/80201]
专题	金属研究所_中国科学院金属研究所
作者单位	1.King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia 2.Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 10083, Peoples R China 3.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, IMR, Shenyang 110016, Liaoning, Peoples R China 4.Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan 5.King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn Div, Thuwal 239556900, Saudi Arabia 6.Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Shaanxi, Peoples R China 7.Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA 8.TSMC, Corporate Res & Chief Technol Off, Hsinchu 30075, Taiwan
推荐引用方式 GB/T 7714	Xue, F,Zhang, JW,Hu, WJ,et al. Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal alpha-In2Se3[J]. ACS NANO,2018,12(5):4976-4983.
APA	Xue, F.,Zhang, JW.,Hu, WJ.,Hsu, WT.,Han, A.,...&Li, LJ.(2018).Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal alpha-In2Se3.ACS NANO,12(5),4976-4983.
MLA	Xue, F,et al."Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal alpha-In2Se3".ACS NANO 12.5(2018):4976-4983.