Compression behavior and phase transition of beta-Si3N4 under high pressure
Liu, J; Gong, HX; Kou, ZL; Fan, C; Liang, H; Wang, QM; Zhang, LL; Peng, F; Yang, M; Ni, XL
刊名CHINESE PHYSICS B
2018
卷号27期号:5页码:56101
关键词phase transition bulk modulus beta-Si3N4 high pressure in situ x-ray diffraction
ISSN号1674-1056
DOI10.1088/1674-1056/27/5/056101
文献子类Article
英文摘要The compressibility and pressure-induced phase transition of beta-Si3N4 were investigated by using an angle dispersive x-ray diffraction technique in a diamond anvil cell at room temperature. Rietveld refinements of the x-ray powder diffraction data verified that the hexagonal structure (with space group P63/m, Z = 2 formulas per unit cell) beta-Si3N4 remained stable under high pressure up to 37 GPa. Upon increasing pressure, beta-Si3N4 transformed to delta-Si3N4 at about 41 GPa. The initial beta-Si3N4 was recovered as the pressure was released to ambient pressure, implying that the observed pressureinduced phase transformation was reversible. The pressure-volume data of beta-Si3N4 was fitted by the third-order BirchMurnaghan equation of state, which yielded a bulk modulus K-0 = 273(2) GPa with its pressure derivative K-0(') = 4 (fixed) and Kq = 278(2) GPa with K-0(') = 5. Furthermore, the compressibility of the unit cell axes (a and c-axes) for the beta-Si3N4 demonstrated an anisotropic property with increasing pressure.
电子版国际标准刊号1741-4199
WOS关键词CUBIC SILICON-NITRIDE ; SINGLE-CRYSTAL ; GAMMA-SI3N4 ; ALPHA-SI3N4 ; HARDNESS ; MEDIA
WOS研究方向Physics
语种英语
CSCD记录号CSCD:6265178
WOS记录号WOS:000432668200001
内容类型期刊论文
源URL[http://ir.ihep.ac.cn/handle/311005/285928]  
专题高能物理研究所_多学科研究中心
作者单位中国科学院高能物理研究所
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GB/T 7714
Liu, J,Gong, HX,Kou, ZL,et al. Compression behavior and phase transition of beta-Si3N4 under high pressure[J]. CHINESE PHYSICS B,2018,27(5):56101.
APA Liu, J.,Gong, HX.,Kou, ZL.,Fan, C.,Liang, H.,...&刘景.(2018).Compression behavior and phase transition of beta-Si3N4 under high pressure.CHINESE PHYSICS B,27(5),56101.
MLA Liu, J,et al."Compression behavior and phase transition of beta-Si3N4 under high pressure".CHINESE PHYSICS B 27.5(2018):56101.
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