Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing

doi:10.1016/j.apsusc.2018.03.009

	Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing
	Zhao JL(赵佳丽); Wang JO(王嘉鸥); Wang, XL; Qin, XY; Wang, W; Liu, Y; Shi, XR; Sun, Y; Liu, C; Zhao, JL
刊名	APPLIED SURFACE SCIENCE
	2018
卷号	443 页码:567-574
关键词	Elemental diffusion Surface morphology High-k dielectrics InAs Thermal stability
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2018.03.009
文献子类	Article
英文摘要	A systematic study of the interfacial chemistry for the HCl pretreated and native oxide InAs(100) samples upon atomic layer deposition (ALD) of Al2O3, and the post deposition annealing (PDA) process has been carried out, using in situ synchrotron radiation photoelectron spectroscopy. The "clean up" effect for the native oxide sample is detected, but it is not observed for the HCl pretreated sample. The out-diffusion and desorption of both In and As oxides have been characterized during the ALD process and the following PDA process. The surface morphology evolution during the PDA process is studied by in situ photo-emission electron microscopy. The bubbles emerged after PDA at 360 degrees C and grew up at 370 degrees C. After PDA at 400 degrees C and at higher temperatures, pits are seen in some areas, and the tear up of the Al2O3 film is seen in other areas with the formation of indium droplets. This study gives insight in the mechanism of elemental diffusion/desorption, which may associate the reliability of III-V semiconductor based devices. (C) 2018 Elsevier B.V. All rights reserved.
电子版国际标准刊号	1873-5584
WOS关键词	ATOMIC-LAYER-DEPOSITION ; SYNCHROTRON-RADIATION PHOTOEMISSION ; V COMPOUND SEMICONDUCTORS ; PASSIVATION ; ENERGY ; FILMS ; SCATTERING ; MOBILITY
WOS研究方向	Chemistry ; Materials Science ; Physics
语种	英语
WOS记录号	WOS:000428446300068
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/285787]
专题	高能物理研究所_多学科研究中心高能物理研究所_实验物理中心高能物理研究所_粒子天体物理中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Zhao JL,Wang JO,Wang, XL,et al. Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing[J]. APPLIED SURFACE SCIENCE,2018,443:567-574.
APA	赵佳丽.,王嘉鸥.,Wang, XL.,Qin, XY.,Wang, W.,...&吴蕊.(2018).Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing.APPLIED SURFACE SCIENCE,443,567-574.
MLA	赵佳丽,et al."Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing".APPLIED SURFACE SCIENCE 443(2018):567-574.