Design of a CDS ASIC for Multireadout X-Ray CCDs With a 0.032% INL

doi:10.1109/TNS.2018.2833484

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	Design of a CDS ASIC for Multireadout X-Ray CCDs With a 0.032% INL
	Lu B(陆波); Lu, B; Chen, Y; Chen Y(陈勇)
刊名	IEEE TRANSACTIONS ON NUCLEAR SCIENCE
	2018
卷号	65 期号:6 页码:1307-1314
关键词	Application specific integrated circuit (ASIC) correlated double sampling (CDS) integral nonlinearity (INL) timing observation X-ray charge-coupled device (CCD)
ISSN号	0018-9499
DOI	10.1109/TNS.2018.2833484
文献子类	Article
英文摘要	Design, analysis, and experimental results of a four-channel correlated double sampling (CDS) application specific integrated circuit (ASIC), named CDS4C, are presented. It aims to interface a type of multi-readout swept charge device for applications in the fields of X-ray spectroscopy, imaging as well as timing. Compared with the conventional CDS architectures based on clamping technique, the innovation of the CDS4C ASIC is that it not only moves the clamping switch out of the signal path but also omits the sampling switch, eliminating the nonlinearity and thermal noise introduced by these switches. Besides, it is implemented in a fully differential architecture which suppresses the second-order harmonic distortion and common-mode interferences, improving the linearity furthermore. A theoretical noise analysis that takes into account the limited bandwidth of the opamp highly coincides with the simulation results. A prototype of the CDS4C ASIC is fabricated with GlobalFoundries 0.35-mu m CMOS process. The experimental results show, within the effective input dynamic range of 0 similar to 20 mV which is equivalent to an X-ray energy band from 0 to 18.25 keV, its integral nonlinearity is 0.032% and equivalent noise charge (ENC) is 8.6 e(-)under 100 kHz pixel rate, whilst the total power consumption is only 8.5 mW from a single 3.3-V supply voltage. When tested with the target Xray charge-coupled device (CCD)-CCD236 using a 1 mu Ci Fe-55 radioisotope, the ASIC achieves together with the CCD an overall energy resolution characterized by full-width-half-magnitude as 165 +/- 4.5 eV at 5.9 keV and a total ENC as 10.3 e(-) where CCD236 is cooled down to in the vicinity of 190-K.
电子版国际标准刊号	1558-1578
WOS关键词	SATELLITE ; CIRCUIT ; HXMT
WOS研究方向	Engineering ; Nuclear Science & Technology
语种	英语
WOS记录号	WOS:000435225100010
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/286026]
专题	高能物理研究所_粒子天体物理中心
通讯作者	Lu B(陆波)
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Lu B,Lu, B,Chen, Y,et al. Design of a CDS ASIC for Multireadout X-Ray CCDs With a 0.032% INL[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2018,65(6):1307-1314.
APA	陆波,Lu, B,Chen, Y,&陈勇.(2018).Design of a CDS ASIC for Multireadout X-Ray CCDs With a 0.032% INL.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,65(6),1307-1314.
MLA	陆波,et al."Design of a CDS ASIC for Multireadout X-Ray CCDs With a 0.032% INL".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 65.6(2018):1307-1314.