Ultra-high precision silicon isotope micro-analysis using a Cameca IMS-1280 SIMS instrument by eliminating the topography effect
Liu, Yu1,2; Li, Xian-Hua1,2; Tang, Guo-Qiang1,2; Li, Qiu-Li1,2; Liu, Xiao-Chi1; Yu, Hui-Min3; Huang, Fang3
刊名JOURNAL OF ANALYTICAL ATOMIC SPECTROMETRY
2019-05-01
卷号34期号:5页码:906-914
ISSN号0267-9477
DOI10.1039/c8ja00431e
英文摘要Silicon (Si) is the second most abundant element in the silicate Earth. Secondary ion mass spectrometry (SIMS) was previously applicable only for low temperature geological processes because of its relatively low precision (+/- 0.3 parts per thousand, 2SD) when used to measure limited Si isotopic variations in high temperature geological processes. To extend the application of Si isotopes, a SIMS protocol for ultra-high precision and accuracy Si isotope measurements was developed in this study using a Cameca IMS-1280. By using high primary beam intensities (10 to 14 nA) and a long acquisition time (160 s), an internal precision of +/- 0.07 parts per thousand (2SE) and external precision (reproducibility) of +/- 0.10 parts per thousand (2SD) were achieved for spot-to-spot analysis on a perfectly flat surface (NIST610 glass). The topography effect significantly degraded the external precision for small-grained quartz crystals. Fortunately, there is a tight correlation between measured delta Si-30 and a secondary beam centering parameter (DTCA-X value). By using the DTCA-X correction, both the external repeatability and accuracy were improved. The Si isotope analysis of nine unknown quartz samples by using this newly developed SIMS method was in good agreement (within +/- 0.1 parts per thousand uncertainty) with solution MC-ICP-MS results.
资助项目Chinese State Key Research and Development Program[2016YFE0203000] ; National Natural Science Foundation of China[41673059] ; National Natural Science Foundation of China[41490632]
WOS关键词RATIOS
WOS研究方向Chemistry ; Spectroscopy
语种英语
出版者ROYAL SOC CHEMISTRY
WOS记录号WOS:000485195500011
资助机构Chinese State Key Research and Development Program ; Chinese State Key Research and Development Program ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Chinese State Key Research and Development Program ; Chinese State Key Research and Development Program ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Chinese State Key Research and Development Program ; Chinese State Key Research and Development Program ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Chinese State Key Research and Development Program ; Chinese State Key Research and Development Program ; National Natural Science Foundation of China ; National Natural Science Foundation of China
内容类型期刊论文
源URL[http://ir.iggcas.ac.cn/handle/132A11/93569]  
专题地质与地球物理研究所_岩石圈演化国家重点实验室
通讯作者Li, Xian-Hua
作者单位1.Chinese Acad Sci, State Key Lab Lithospher Evolut, Inst Geol & Geophys, Beijing 100029, Peoples R China
2.Univ Chinese Acad Sci, Coll Earth & Planetary Sci, Beijing 100049, Peoples R China
3.Univ Sci & Technol China, Sch Earth & Space Sci, CAS Key Lab Crust Mantle Mat & Environm, Hefei 230026, Anhui, Peoples R China
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Liu, Yu,Li, Xian-Hua,Tang, Guo-Qiang,et al. Ultra-high precision silicon isotope micro-analysis using a Cameca IMS-1280 SIMS instrument by eliminating the topography effect[J]. JOURNAL OF ANALYTICAL ATOMIC SPECTROMETRY,2019,34(5):906-914.
APA Liu, Yu.,Li, Xian-Hua.,Tang, Guo-Qiang.,Li, Qiu-Li.,Liu, Xiao-Chi.,...&Huang, Fang.(2019).Ultra-high precision silicon isotope micro-analysis using a Cameca IMS-1280 SIMS instrument by eliminating the topography effect.JOURNAL OF ANALYTICAL ATOMIC SPECTROMETRY,34(5),906-914.
MLA Liu, Yu,et al."Ultra-high precision silicon isotope micro-analysis using a Cameca IMS-1280 SIMS instrument by eliminating the topography effect".JOURNAL OF ANALYTICAL ATOMIC SPECTROMETRY 34.5(2019):906-914.
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