Ultraviolet electroluminescence from a n-ZnO film/p-GaN heterojunction under both forward and reverse bias

doi:10.1039/c8tc04507k

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Ultraviolet electroluminescence from a n-ZnO film/p-GaN heterojunction under both forward and reverse bias
	Shen, Dezhen 2; Li, Binghui 2; Chen, Xing 2; Yang, Jialin 1,2; Ma, Hongyu 1,2; Liu, Kewei 2; Ai, Qiu 1,2
刊名	JOURNAL OF MATERIALS CHEMISTRY C
	2018-11-14
卷号	6 期号:42 页码:11368-11373
ISSN号	2050-7526
DOI	10.1039/c8tc04507k
通讯作者	Liu, Kewei(liukw@ciomp.ac.cn) ; Shen, Dezhen(shendz@ciomp.ac.cn)
英文摘要	ZnO film was fabricated on p-GaN film using the molecular beam epitaxy technique to form heterojunction light emitting diodes (LEDs). The devices exhibited strong light emission under both forward and reverse bias. The origin of different luminescence peaks has been investigated by comparing electroluminescence (EL) and photoluminescence spectra. When a forward bias is applied to the device, intense ultraviolet emission at approximate to 376 nm originating from ZnO rather than GaN can be observed, which is associated with the larger hole mobility of p-GaN than the electron mobility of n-ZnO. Under the reverse bias, the device shows broad emission at 520 nm originating from deep level-related recombination in ZnO, emission at 430 nm from GaN, 376 nm from ZnO and weak emission at 408 nm from the interface with a lower injection current of 10 mA. As the injection reverse current increases to 20 mA, the EL emission at 376 nm exhibits a dramatic increase in intensity without a peak shift. The emission mechanism of the heterojunction LED is discussed in terms of interface states and energy band theory. Our findings in this work provide an innovative path for the design and development of ZnO-based ultraviolet diodes.
资助项目	National Natural Science Foundation of China[61475153] ; National Natural Science Foundation of China[61605200] ; National Natural Science Foundation of China[11727902] ; National Natural Science Foundation of China[61425021] ; National Natural Science Foundation of China[61525404] ; Jilin Province Young and Middle-aged Science and Technology Innovation Leaders and Team Project[20180519023JH]
WOS关键词	LIGHT-EMITTING-DIODES ; MICROWIRE ; BARRIERS ; BAND
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	ROYAL SOC CHEMISTRY
WOS记录号	WOS:000449698600018
资助机构	National Natural Science Foundation of China ; Jilin Province Young and Middle-aged Science and Technology Innovation Leaders and Team Project
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/60319]
专题	中国科学院长春光学精密机械与物理研究所
通讯作者	Shen, Dezhen; Liu, Kewei
作者单位	1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Jilin, Peoples R China
推荐引用方式 GB/T 7714	Shen, Dezhen,Li, Binghui,Chen, Xing,et al. Ultraviolet electroluminescence from a n-ZnO film/p-GaN heterojunction under both forward and reverse bias[J]. JOURNAL OF MATERIALS CHEMISTRY C,2018,6(42):11368-11373.
APA	Shen, Dezhen.,Li, Binghui.,Chen, Xing.,Yang, Jialin.,Ma, Hongyu.,...&Ai, Qiu.(2018).Ultraviolet electroluminescence from a n-ZnO film/p-GaN heterojunction under both forward and reverse bias.JOURNAL OF MATERIALS CHEMISTRY C,6(42),11368-11373.
MLA	Shen, Dezhen,et al."Ultraviolet electroluminescence from a n-ZnO film/p-GaN heterojunction under both forward and reverse bias".JOURNAL OF MATERIALS CHEMISTRY C 6.42(2018):11368-11373.