Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy

doi:10.1186/s11671-017-2131-8

	Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy
	Yu, Y; Heng, YK; Yang, YZ; Wen, KL; Liu, SL; Yan, BJ; Yan BJ(闫保军); Liu SL(刘术林); Heng YK(衡月昆); Yang YZ(杨玉真)
刊名	NANOSCALE RESEARCH LETTERS
	2017
卷号	12 页码:363
关键词	Atomic layer deposition X-ray photoelectron spectroscopy Heterojunction Microchannel plate
ISSN号	1556-276X
DOI	10.1186/s11671-017-2131-8
文献子类	Article
英文摘要	Pure aluminum oxide (Al2O3) and zinc aluminum oxide (ZnxAl1-xO) thin films were deposited by atomic layer deposition (ALD). The microstructure and optical band gaps (Eg) of the ZnxAl1-xO (0.2 <= x <= 1) films were studied by X-ray diffractometer and Tauc method. The band offsets and alignment of atomic-layer-deposited Al2O3/Zn0.8Al0.2O heterojunction were investigated in detail using charge-corrected X-ray photoelectron spectroscopy. In this work, different methodologies were adopted to recover the actual position of the core levels in insulator materials which were easily affected by differential charging phenomena. Valence band offset (Delta E-V) and conduction band offset (Delta E-C) for the interface of the Al2O3/Zn0.8Al0.2O heterojunction have been constructed. An accurate value of Delta E-V = 0. 82 +/- 0.12 eV was obtained from various combinations of core levels of heterojunction with varied Al2O3 thickness. Given the experimental Eg of 6.8 eV for Al2O3 and 5.29 eV for Zn0.8Al0.2O, a type-I heterojunction with a Delta E-C of 0.69 +/- 0.12 eV was found. The precise determination of the band alignment of Al2O3/Zn0.8Al0.2O heterojunction is of particular importance for gaining insight to the design of various electronic devices based on such heterointerface.
WOS关键词	PULSED-LASER DEPOSITION ; MICROCHANNEL PLATES ; ALLOY-FILMS ; VALENCE ; DETECTORS ; ALIGNMENT ; ALN
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
WOS记录号	WOS:000401723100006
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/284896]
专题	高能物理研究所_实验物理中心高能物理研究所_多学科研究中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Yu, Y,Heng, YK,Yang, YZ,et al. Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy[J]. NANOSCALE RESEARCH LETTERS,2017,12:363.
APA	Yu, Y.,Heng, YK.,Yang, YZ.,Wen, KL.,Liu, SL.,...&温凯乐.(2017).Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy.NANOSCALE RESEARCH LETTERS,12,363.
MLA	Yu, Y,et al."Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy".NANOSCALE RESEARCH LETTERS 12(2017):363.