New sulfur bridged neutral annulenes. Structure, physical properties and applications in organic field-effect transistors

doi:10.1039/c0cc03974h

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	New sulfur bridged neutral annulenes. Structure, physical properties and applications in organic field-effect transistors
	Singh, Kamaljit 1; Sharma, Amit 1; Zhang, Jing 2; Xu, Wei 2; Zhu, Daoben 2
刊名	CHEMICAL COMMUNICATIONS
	2011
卷号	47 期号:3 页码:905-907
ISSN号	1359-7345
DOI	10.1039/c0cc03974h
英文摘要	New, neutral, meso-substituted tetrathia[22]annulene[2,1,2,1] aromatic macrocyclic architectures display p-type semiconductor behaviour and constitute efficacious molecular field-effect transistors with reproducible bulk-like carrier mobility (as high as 0.63 cm(2) V-1 S-1) on highly crystalline thin films deposited on octadecyltrichlorosilane modified SiO2.
语种	英语
出版者	ROYAL SOC CHEMISTRY
WOS记录号	WOS:000285515200015
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/71823]
专题	中国科学院化学研究所
通讯作者	Singh, Kamaljit
作者单位	1.Guru Nanak Dev Univ, Dept Appl Chem Sci & Technol, Organ Synth Lab, Amritsar 143005, Punjab, India 2.Acad Sci, Inst Chem, Lab Organ Solids, Beijing Natl Lab Mol Sci,CAS Key, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Singh, Kamaljit,Sharma, Amit,Zhang, Jing,et al. New sulfur bridged neutral annulenes. Structure, physical properties and applications in organic field-effect transistors[J]. CHEMICAL COMMUNICATIONS,2011,47(3):905-907.
APA	Singh, Kamaljit,Sharma, Amit,Zhang, Jing,Xu, Wei,&Zhu, Daoben.(2011).New sulfur bridged neutral annulenes. Structure, physical properties and applications in organic field-effect transistors.CHEMICAL COMMUNICATIONS,47(3),905-907.
MLA	Singh, Kamaljit,et al."New sulfur bridged neutral annulenes. Structure, physical properties and applications in organic field-effect transistors".CHEMICAL COMMUNICATIONS 47.3(2011):905-907.