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Trifluoromethyltriphenodioxazine: Air-stable and high-performance n-type semiconductor
Di, Chong-an1; Li, Jing2; Yu, Gui1; Xiao, Yi2; Guo, Yunlong1; Liu, Yunqi1; Qian, Xuhong3,4; Zhu, Daoben1
刊名ORGANIC LETTERS
2008-07-17
卷号10期号:14页码:3025-3028
ISSN号1523-7060
DOI10.1021/ol8008667
英文摘要Two trifluoromethyltriphenodioxazines were efficiently synthesized as active materials for n-type organic field-effect transistors, and their optical and electrochemical properties were characterized. Air-stable and high-performance thin film transistors based on the two compounds were fabricated.
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000257629200028
内容类型期刊论文
源URL[http://ir.iccas.ac.cn/handle/121111/64375]  
专题中国科学院化学研究所
通讯作者Yu, Gui
作者单位1.Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
2.Dalian Univ Technol, State Key Lab Fine Chem, Dalian 116012, Peoples R China
3.E China Univ Sci & Technol, Shanghai Key Lab Chem Biol, Shanghai 200237, Peoples R China
4.E China Univ Sci & Technol, State Key Lab Bioreactor Engn, Shanghai 200237, Peoples R China
推荐引用方式
GB/T 7714
Di, Chong-an,Li, Jing,Yu, Gui,et al. Trifluoromethyltriphenodioxazine: Air-stable and high-performance n-type semiconductor[J]. ORGANIC LETTERS,2008,10(14):3025-3028.
APA Di, Chong-an.,Li, Jing.,Yu, Gui.,Xiao, Yi.,Guo, Yunlong.,...&Zhu, Daoben.(2008).Trifluoromethyltriphenodioxazine: Air-stable and high-performance n-type semiconductor.ORGANIC LETTERS,10(14),3025-3028.
MLA Di, Chong-an,et al."Trifluoromethyltriphenodioxazine: Air-stable and high-performance n-type semiconductor".ORGANIC LETTERS 10.14(2008):3025-3028.
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