Tuning the threshold voltage by inserting a thin molybdenum oxide layer into organic field-effect transistors

doi:10.1063/1.2822443

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	Tuning the threshold voltage by inserting a thin molybdenum oxide layer into organic field-effect transistors
	Guo, Yunlong; Liu, Yunqi; Di, Chong-an; Yu, Gui; Wu, Weiping; Ye, Shanghui; Wang, Ying; Xu, Xinjun; Sun, Yanming
刊名	APPLIED PHYSICS LETTERS
	2007-12-24
卷号	91 期号:26
ISSN号	0003-6951
DOI	10.1063/1.2822443
英文摘要	The authors report on the organic field-effect transistors based on copper phthalocyanine with a inserted layer of molybdenum oxide (MoO(3)). After applying a positive gate voltage of 100 V, the threshold voltage had a large shift from -11.8 to +66.2 V and the device operating model was changed from the enhancement model into the depletion one. A possible mechanism is believed to be originated from the stored charges in the interface between the thin MoO(3) layer and the active layer. Largely reversible shift in the threshold voltage and retention time were also obtained in the devices by the programs used. (c) 2007 American Institute of Physics.
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000251987400051
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/61029]
专题	中国科学院化学研究所
通讯作者	Liu, Yunqi
作者单位	Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Guo, Yunlong,Liu, Yunqi,Di, Chong-an,et al. Tuning the threshold voltage by inserting a thin molybdenum oxide layer into organic field-effect transistors[J]. APPLIED PHYSICS LETTERS,2007,91(26).
APA	Guo, Yunlong.,Liu, Yunqi.,Di, Chong-an.,Yu, Gui.,Wu, Weiping.,...&Sun, Yanming.(2007).Tuning the threshold voltage by inserting a thin molybdenum oxide layer into organic field-effect transistors.APPLIED PHYSICS LETTERS,91(26).
MLA	Guo, Yunlong,et al."Tuning the threshold voltage by inserting a thin molybdenum oxide layer into organic field-effect transistors".APPLIED PHYSICS LETTERS 91.26(2007).