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Negative differential resistance and memory effect in diodes based on 1,4-dibenzyl C60 and zinc phthalocyanine doped polystyrene hybrid material
Lin, Jian; Zheng, Min; Chen, Jiangshan; Gao, Xiang; Ma, Dongge
刊名INORGANIC CHEMISTRY
2007-01-08
卷号46期号:1页码:341-344
ISSN号0020-1669
DOI10.1021/ic061851w
英文摘要Negative differential resistance (NDR) and memory effect were observed in diodes based on 1,4-dibenzyl C60 (DBC) and zinc phthalocyanine doped polystyrene hybrid material. Certain negative starting sweeping voltages led to a reproducible NDR, making the hybrid material a promising candidate in memory devices. It was found that the introduction of DBC enhanced the ON/OFF current ratio and significantly improved the memory stability. The ON/OFF current ratio was up to 2 orders of magnitude. The write-read-erase-reread cycles were more than 10(6), and the retention time reached 10 000 s without current degradation.
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000243157100041
内容类型期刊论文
源URL[http://ir.iccas.ac.cn/handle/121111/60559]  
专题中国科学院化学研究所
通讯作者Gao, Xiang
作者单位1.Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Electroanalyt Chem, Changchun 130022, Peoples R China
2.Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
推荐引用方式
GB/T 7714
Lin, Jian,Zheng, Min,Chen, Jiangshan,et al. Negative differential resistance and memory effect in diodes based on 1,4-dibenzyl C60 and zinc phthalocyanine doped polystyrene hybrid material[J]. INORGANIC CHEMISTRY,2007,46(1):341-344.
APA Lin, Jian,Zheng, Min,Chen, Jiangshan,Gao, Xiang,&Ma, Dongge.(2007).Negative differential resistance and memory effect in diodes based on 1,4-dibenzyl C60 and zinc phthalocyanine doped polystyrene hybrid material.INORGANIC CHEMISTRY,46(1),341-344.
MLA Lin, Jian,et al."Negative differential resistance and memory effect in diodes based on 1,4-dibenzyl C60 and zinc phthalocyanine doped polystyrene hybrid material".INORGANIC CHEMISTRY 46.1(2007):341-344.
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