pi-Extended Isoindigo-Based Derivative: A Promising Electron Deficient Building Block for Polymer Semiconductors

doi:10.1021/acsami.7b13570

CORC > 化学研究所 > 中国科学院化学研究所

	pi-Extended Isoindigo-Based Derivative: A Promising Electron Deficient Building Block for Polymer Semiconductors
	Xu, Long 1,2; Zhao, Zhiyuan 3; Xiao, Mingchao 1,2; Yang, Jie 1,2; Xiao, Jian 1,2; Yi, Zhengran 1,2; Wang, Shuai 1,2; Liu, Yunqi 3
刊名	ACS APPLIED MATERIALS & INTERFACES
	2017-11-22
卷号	9 期号:46 页码:40549-40555
关键词	Organic Thin-film Transistors Electron-deficient Building Blocks Donor-acceptor Copolymers Isoindigo Molecular Packing
ISSN号	1944-8244
DOI	10.1021/acsami.7b13570
英文摘要	The exploration of novel electron-deficient building blocks is a key task for developing high-performance polymer semiconductors in organic thin-film transistors. In view of the situation of the lack of strong electron-deficient building blocks, we designed two novel pi-extended isoindigo-based electron-deficient building blocks, IVI and F4IVI. Owing to the strong electron-deficient nature and the extended pi-conjugated system of the two acceptor units, their copolymers, PIVI2T and PF(4)IVI2T, containing 2,2'-bithiophene donor units, are endowed with deep-lying highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO) energy levels and strong intermolecular interactions. In comparison to PIVI2T, the fluorinated PF(4)IVI2T exhibits stronger intra- and intermolecular interactions, lower HOMO/LUMO energy levels up to -5.74/-4.17 eV, and more ordered molecular packing with a smaller pi-pi stacking distance of up to 3.53 angstrom, resulting in an excellent ambipolar transporting behavior and a promising application in logic circuits for PF(4)IVI2T in ambient with hole and electron mobilities of up to 1.03 and 1.82 cm2 V-1 s(-1), respectively. The results reveal that F4IVI is a promising and strong electron-deficient building unit to construct high-performance semiconducting polymers, which provides an insight into the structureproperty relationships for the exploration and molecular engineering of excellent electron-deficient building blocks in the field of organic electronics.
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000416614600076
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/45043]
专题	中国科学院化学研究所
通讯作者	Yi, Zhengran; Wang, Shuai; Liu, Yunqi
作者单位	1.Huazhong Univ Sci & Technol, Coll Chem & Chem Engn, Wuhan 430074, Hubei, Peoples R China 2.Huazhong Univ Sci & Technol, Key Lab Large Format Battery Mat & Syst, Minist Educ, Hubei Key Lab Mat Chem & Serv Failure, Wuhan 430074, Hubei, Peoples R China 3.Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Xu, Long,Zhao, Zhiyuan,Xiao, Mingchao,et al. pi-Extended Isoindigo-Based Derivative: A Promising Electron Deficient Building Block for Polymer Semiconductors[J]. ACS APPLIED MATERIALS & INTERFACES,2017,9(46):40549-40555.
APA	Xu, Long.,Zhao, Zhiyuan.,Xiao, Mingchao.,Yang, Jie.,Xiao, Jian.,...&Liu, Yunqi.(2017).pi-Extended Isoindigo-Based Derivative: A Promising Electron Deficient Building Block for Polymer Semiconductors.ACS APPLIED MATERIALS & INTERFACES,9(46),40549-40555.
MLA	Xu, Long,et al."pi-Extended Isoindigo-Based Derivative: A Promising Electron Deficient Building Block for Polymer Semiconductors".ACS APPLIED MATERIALS & INTERFACES 9.46(2017):40549-40555.