Quasi-Layer-by-Layer Growth of Pentacene on HOPG and Au Surfaces

doi:10.1021/acs.jpcc.7b05853

CORC > 化学研究所 > 中国科学院化学研究所

	Quasi-Layer-by-Layer Growth of Pentacene on HOPG and Au Surfaces
	Yang, Hongyan 1,2; Huang, Lizhen 1,2; Sun, Kewei 1,2; Niu, Kaifeng 1,2; Cui, Zequn 1,2; Zhang, Haiming 1,2; Wang, Zi 1,2; Yang, Donghang 3; Chi, Lifeng 1,2
刊名	JOURNAL OF PHYSICAL CHEMISTRY C
	2017-11-16
卷号	121 期号:45 页码:25043-25051
ISSN号	1932-7447
DOI	10.1021/acs.jpcc.7b05853
英文摘要	High-resolution scanning tunneling microscopy (STM) is a promising method for characterizing organic semiconductors to obtain a deep understanding of organic semiconductor physics. However, organic films on conductive single-crystal substrates, which are required for STM, usually present different growth behaviors than the films on inert substrates such as SiO2. Here, we reported a simple modification method for modulating the organic semiconductor film growth on the highly oriented pyrolytic graphite (HOPG) and Au(111) substrates and investigated the detailed morphology evolution. Self-assembled monolayers (SAMs) fabricated from vacuum deposition and solution processing were introduced on these conductive substrates. Pentacene, a prototypical organic semiconductor, presented quasi layer-by-layer growth on HOPG or Au(111) sufaces modified with solution-processed alkane monolayer. The pentacene film resembled the upright packing and terraced morphology but with larger grain size than that of thin-film phase on SiO2. The introduced n-dotriacontane layer decreased the interaction between pentacene adsorbates and the active substrate and provided a lower surface energy which supported the upright orientation of pentacene. Modification of the substrates with alkanes provides a feasible approach to grow high-quality organic thin films that are suitable for characterization down to the molecular level. Additionally, this approach is effective for two-dimensional substrate materials such as graphene and is not limited to single-crystal substrates.
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000416202900017
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/45035]
专题	中国科学院化学研究所
通讯作者	Wang, Zi; Chi, Lifeng
作者单位	1.Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China 2.Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China 3.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Jilin, Peoples R China
推荐引用方式 GB/T 7714	Yang, Hongyan,Huang, Lizhen,Sun, Kewei,et al. Quasi-Layer-by-Layer Growth of Pentacene on HOPG and Au Surfaces[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2017,121(45):25043-25051.
APA	Yang, Hongyan.,Huang, Lizhen.,Sun, Kewei.,Niu, Kaifeng.,Cui, Zequn.,...&Chi, Lifeng.(2017).Quasi-Layer-by-Layer Growth of Pentacene on HOPG and Au Surfaces.JOURNAL OF PHYSICAL CHEMISTRY C,121(45),25043-25051.
MLA	Yang, Hongyan,et al."Quasi-Layer-by-Layer Growth of Pentacene on HOPG and Au Surfaces".JOURNAL OF PHYSICAL CHEMISTRY C 121.45(2017):25043-25051.