Low-Temperature Heteroepitaxy of 2D PbI2/Graphene for Large-Area Flexible Photodetectors | |
Zhang, Jincan1,2; Huang, Yucheng1; Tan, Zhenjun1,2; Li, Tianran1; Zhang, Yichi1; Jia, Kaicheng1; Lin, Li1; Sun, Luzhao1,2; Chen, Xiwen3,4; Li, Zhenzhu3,4 | |
刊名 | ADVANCED MATERIALS |
2018-09-06 | |
卷号 | 30期号:36 |
关键词 | Flexible Photodetector Graphene Heteroepitaxy Imaging Lead Iodide |
ISSN号 | 0935-9648 |
DOI | 10.1002/adma.201803194 |
英文摘要 | Heterostructures based on graphene and other 2D atomic crystals exhibit fascinating properties and intriguing potential in flexible optoelectronics, where graphene films function as transparent electrodes and other building blocks are used as photoactive materials. However, large-scale production of such heterostructures with superior performance is still in early stages. Herein, for the first time, the preparation of a submeter-sized, vertically stacked heterojunction of lead iodide (PbI2)/graphene on a flexible polyethylene terephthalate (PET) film by vapor deposition of PbI2 on graphene/PET substrate at a temperature lower than 200 degrees C is demonstrated. This film is subsequently used to fabricate bendable graphene/PbI2/graphene sandwiched photodetectors, which exhibit high responsivity (45 A W-1 cm(-2)), fast response (35 mu s rise, 20 mu s decay), and high-resolution imaging capability (1 mu m). This study may pave a facile pathway for scalable production of high-performance flexible devices. |
语种 | 英语 |
出版者 | WILEY-V C H VERLAG GMBH |
WOS记录号 | WOS:000443377100025 |
内容类型 | 期刊论文 |
源URL | [http://ir.iccas.ac.cn/handle/121111/42281] |
专题 | 中国科学院化学研究所 |
通讯作者 | Liu, Zhongfan; Peng, Hailin |
作者单位 | 1.Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, Ctr Nanochem,Beijing Sci & Engn Ctr Nanocarbons, Beijing 100871, Peoples R China 2.Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China 3.Soochow Univ, Soochow Inst Energy & Mat Innovat SIEMIS, Coll Phys Optoelect & Energy, Suzhou 215006, Peoples R China 4.Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215006, Peoples R China 5.BGI, Beijing 100194, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, Jincan,Huang, Yucheng,Tan, Zhenjun,et al. Low-Temperature Heteroepitaxy of 2D PbI2/Graphene for Large-Area Flexible Photodetectors[J]. ADVANCED MATERIALS,2018,30(36). |
APA | Zhang, Jincan.,Huang, Yucheng.,Tan, Zhenjun.,Li, Tianran.,Zhang, Yichi.,...&Peng, Hailin.(2018).Low-Temperature Heteroepitaxy of 2D PbI2/Graphene for Large-Area Flexible Photodetectors.ADVANCED MATERIALS,30(36). |
MLA | Zhang, Jincan,et al."Low-Temperature Heteroepitaxy of 2D PbI2/Graphene for Large-Area Flexible Photodetectors".ADVANCED MATERIALS 30.36(2018). |
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