A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications

	A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications
	Congxin Xia; Juan Du; Wenqi Xiong; Yu Jia; Zhongming Wei; Jingbo Li
刊名	Journal of Materials Chemistry A
	2017
卷号	5 页码:13400–13410
学科主题	半导体物理
公开日期	2018-06-01
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28521]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Congxin Xia,Juan Du,Wenqi Xiong,et al. A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications[J]. Journal of Materials Chemistry A,2017,5:13400–13410.
APA	Congxin Xia,Juan Du,Wenqi Xiong,Yu Jia,Zhongming Wei,&Jingbo Li.(2017).A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications.Journal of Materials Chemistry A,5,13400–13410.
MLA	Congxin Xia,et al."A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications".Journal of Materials Chemistry A 5(2017):13400–13410.