Band engineering of the MoS2/stanene heterostructure: strain and electrostatic gating

	Band engineering of the MoS2/stanene heterostructure: strain and electrostatic gating
	Wenqi Xiong; Congxin Xia; Juan Du; Tianxing Wang; Yuting Peng; Zhongming Wei; Jingbo Li
刊名	Nanotechnology
	2017
卷号	28 页码:195702
学科主题	半导体物理
公开日期	2018-06-01
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28499]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Wenqi Xiong,Congxin Xia,Juan Du,et al. Band engineering of the MoS2/stanene heterostructure: strain and electrostatic gating[J]. Nanotechnology,2017,28:195702.
APA	Wenqi Xiong.,Congxin Xia.,Juan Du.,Tianxing Wang.,Yuting Peng.,...&Jingbo Li.(2017).Band engineering of the MoS2/stanene heterostructure: strain and electrostatic gating.Nanotechnology,28,195702.
MLA	Wenqi Xiong,et al."Band engineering of the MoS2/stanene heterostructure: strain and electrostatic gating".Nanotechnology 28(2017):195702.