Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

doi:10.1038/s41467-019-09016-0

	Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation
	Liu, Donghua 1,2; Chen, Xiaosong 1,2; Yan, Yaping 3,4,5; Zhang, Zhongwei 3,4,5; Jin, Zhepeng 1,2; Yi, Kongyang 1,2; Zhang, Cong 1,2; Zheng, Yujie 6; Wang, Yao 7,8; Yang, Jun9
刊名	NATURE COMMUNICATIONS
	2019-03-13
卷号	10 页码:11
ISSN号	2041-1723
DOI	10.1038/s41467-019-09016-0
通讯作者	Xu, Xiangfan(xuxiangfan@tongji.edu.cn) ; Wei, Dapeng(dpwei@cigit.ac.cn) ; Wei, Dacheng(weidc@fudan.edu.cn)
英文摘要	Relatively low mobility and thermal conductance create challenges for application of tungsten diselenide (WSe2) in high performance devices. Dielectric interface is of extremely importance for improving carrier transport and heat spreading in a semiconductor device. Here, by near-equilibrium plasma-enhanced chemical vapour deposition, we realize catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride (2D-BN) with domains around 20 similar to 200 nm directly on SiO2/Si, quartz, sapphire, silicon or SiO2/Si with three-dimensional patterns at 300 degrees C. Owing to the atomically-clean van-der-Walls conformal interface and the fact that 2D-BN can better bridge the vibrational spectrum across the interface and protect interfacial heat conduction against substrate roughness, both improved performance and thermal dissipation of WSe2 field-effect transistor are realized with mobility around 56 similar to 121 cm(2 )V(-1 )s(-1) and saturated power intensity up to 4.23 x 10(3) W cm(-2). Owing to its simplicity, conformal growth on three-dimensional surface, compatibility with micro-electronic process, it has potential for application in future two-dimensional electronics.
资助项目	National Natural Science Foundation of China[51773041] ; National Natural Science Foundation of China[11890703] ; National Natural Science Foundation of China[21544001] ; National Natural Science Foundation of China[21603038] ; National Natural Science Foundation of China[11404329] ; National Natural Science Foundation of China[51506153] ; National Natural Science Foundation of China[11334007] ; National Natural Science Foundation of China[11674245] ; Shanghai Committee of Science and Technology in China[18ZR1404900] ; Shanghai Committee of Science and Technology in China[17ZR1448000] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB30000000] ; Natural Science Foundation Project of CQ CSTC[CSTC2014jcyjjq50004] ; National Youth 1000 Talents Program in China ; State Key Laboratory of Molecular Engineering of Polymers
WOS研究方向	Science & Technology - Other Topics
语种	英语
出版者	NATURE PUBLISHING GROUP
WOS记录号	WOS:000461022600001
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/7558]
专题	中国科学院重庆绿色智能技术研究院
通讯作者	Xu, Xiangfan; Wei, Dapeng; Wei, Dacheng
作者单位	1.Fudan Univ, State Key Lab Mol Engn Polymers, Shanghai 200433, Peoples R China 2.Fudan Univ, Dept Macromol Sci, Shanghai 200433, Peoples R China 3.Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China 4.Tongji Univ, Inst Adv Study, Shanghai 200092, Peoples R China 5.Tongji Univ, Sch Phys Sci & Engn, China EU Joint Lab Nanophonon, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China 6.Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore 7.Zhejiang Univ, Int Ctr New Struct Mat, Hangzhou 310027, Zhejiang, Peoples R China 8.Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China 9.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China
推荐引用方式 GB/T 7714	Liu, Donghua,Chen, Xiaosong,Yan, Yaping,et al. Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation[J]. NATURE COMMUNICATIONS,2019,10:11.
APA	Liu, Donghua.,Chen, Xiaosong.,Yan, Yaping.,Zhang, Zhongwei.,Jin, Zhepeng.,...&Wei, Dacheng.(2019).Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation.NATURE COMMUNICATIONS,10,11.
MLA	Liu, Donghua,et al."Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation".NATURE COMMUNICATIONS 10(2019):11.