Residual impurities and electrical properties of undoped LEC InAs single crystals

	Residual impurities and electrical properties of undoped LEC InAs single crystals
	Hu Weijie ; Zhao Youwen ; Sun Wenrong ; Duan Manlong ; Dong Zhiyuan ; Yang Jun
刊名	半导体学报
	2010
卷号	31 期号:4 页码:042001-1-042001-4
中文摘要	impurities and their influence on the properties of inas single crystals have been studied by combining the results of glow discharge mass spectrometry (gdms), hall measurements, raman scattering and infrared absorption. the results indicate that carbon is a major impurity in lec-inas single crystals and exhibits a significant influence on the electrical and optical properties.
学科主题	半导体材料
收录类别	CSCD
语种	中文
公开日期	2011-08-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21624]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Hu Weijie,Zhao Youwen,Sun Wenrong,et al. Residual impurities and electrical properties of undoped LEC InAs single crystals[J]. 半导体学报,2010,31(4):042001-1-042001-4.
APA	Hu Weijie,Zhao Youwen,Sun Wenrong,Duan Manlong,Dong Zhiyuan,&Yang Jun.(2010).Residual impurities and electrical properties of undoped LEC InAs single crystals.半导体学报,31(4),042001-1-042001-4.
MLA	Hu Weijie,et al."Residual impurities and electrical properties of undoped LEC InAs single crystals".半导体学报 31.4(2010):042001-1-042001-4.