Heteroepitaxial growth of wafer scale highly oriented graphene using inductively coupled plasma chemical vapor deposition

doi:10.1088/2053-1583/3/2/021001

	Heteroepitaxial growth of wafer scale highly oriented graphene using inductively coupled plasma chemical vapor deposition
	Gao, Libo 1,2,3; Xu, Hai 2,3; Li, Linjun 2,3; Yang, Yang 4; Fu, Qiang 4; Bao, Xinhe 4; Loh, Kian Ping 2,3
刊名	2D MATERIALS
	2016-06-01
卷号	3 期号:2
关键词	Graphene Heteroepitaxial Cvd Grain Boundary Nanocrystal
ISSN号	2053-1583
DOI	10.1088/2053-1583/3/2/021001
文献子类	Article
英文摘要	The chemical vapor deposition (CVD) of graphene on Cu has attracted much attention because of its industrial scalability. Herein, we report inductively coupled plasma-assisted CVD of epitaxially grown graphene on (111)-textured Cu film alloyed with a small amount of Ni, where large area high quality graphene film can be grown in less than 5 min at 800 degrees C, thus affording industrial scalability. The epitaxially grown graphene films on (111)-textured Cu contain grains which are predominantly aligned with the Cu lattice and about 10% of 30 degrees-rotated grains (anti-grains). Such graphene films are exclusively monolayer and possess good electrical conductivity, high carrier mobility, and room temperature quantum Hall effect. Magnetoresistance measurements reveal that the reduction of the grain sizes from 150 nmto 50 nm produce increasing Anderson localization and the appearance of a transport gap. Owing to the presence of grain boundaries in these anti-grains, epitaxially grown graphene films possess n-type characteristics and exhibit ultra-high sensitivity to adsorbates.
WOS关键词	SINGLE-LAYER GRAPHENE ; GRAIN-BOUNDARIES ; EPITAXIAL GRAPHENE ; LARGE-AREA ; CRYSTAL GRAPHENE ; COPPER FOILS ; FILMS ; MICROSCOPY ; DYNAMICS ; TEMPERATURES
WOS研究方向	Materials Science
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000378571400001
内容类型	期刊论文
源URL	[http://cas-ir.dicp.ac.cn/handle/321008/170470]
专题	大连化学物理研究所_中国科学院大连化学物理研究所
通讯作者	Gao, Libo
作者单位	1.Nanjing Univ, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China 2.Natl Univ Singapore, Ctr Adv Mat 2D, Singapore 117543, Singapore 3.Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore 4.Chinese Acad Sci, Dalian Inst Chem Phys, iChEM, State Key Lab Catalysis, Dalian 116023, Peoples R China
推荐引用方式 GB/T 7714	Gao, Libo,Xu, Hai,Li, Linjun,et al. Heteroepitaxial growth of wafer scale highly oriented graphene using inductively coupled plasma chemical vapor deposition[J]. 2D MATERIALS,2016,3(2).
APA	Gao, Libo.,Xu, Hai.,Li, Linjun.,Yang, Yang.,Fu, Qiang.,...&Loh, Kian Ping.(2016).Heteroepitaxial growth of wafer scale highly oriented graphene using inductively coupled plasma chemical vapor deposition.2D MATERIALS,3(2).
MLA	Gao, Libo,et al."Heteroepitaxial growth of wafer scale highly oriented graphene using inductively coupled plasma chemical vapor deposition".2D MATERIALS 3.2(2016).