Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging

doi:10.1038/ncomms13256

	Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging
	Timpe, Olaf 2; Ding, Feng 3; Fu, Qiang 5; Willinger, Marc-Georg 2; Schloegl, R.2; Wang, Zhu-Jun 2; Dong, Jichen 3; Cui, Yi 4; Eres, Gyula 1
刊名	NATURE COMMUNICATIONS
	2016-10-19
卷号	7
ISSN号	2041-1723
DOI	10.1038/ncomms13256
文献子类	Article
英文摘要	In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene-graphene and graphene-substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy and density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp(2) carbon nanostructures in between graphene and graphite.
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; NI ALLOY FOILS ; BILAYER GRAPHENE ; EPITAXIAL GRAPHENE ; GROWTH ; EDGE ; CU ; GRAPHITE ; KINETICS ; ENERGY
WOS研究方向	Science & Technology - Other Topics
语种	英语
出版者	NATURE PUBLISHING GROUP
WOS记录号	WOS:000385618100002
内容类型	期刊论文
源URL	[http://cas-ir.dicp.ac.cn/handle/321008/169926]
专题	大连化学物理研究所_中国科学院大连化学物理研究所
通讯作者	Willinger, Marc-Georg
作者单位	1.Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA 2.Max Planck Gesell, Fritz Haber Inst, Dept Inorgan Chem, D-14195 Berlin, Germany 3.Hong Kong Polytech Univ, Inst Text & Clothing, Hong Kong 999077, Hong Kong, Peoples R China 4.Chinese Acad Sci, Suzhou Inst Nano Tech & Nano Bion, 3Vacuum Interconnected Nanotech Workstn, Suzhou 215123, Peoples R China 5.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Peoples R China
推荐引用方式 GB/T 7714	Timpe, Olaf,Ding, Feng,Fu, Qiang,et al. Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging[J]. NATURE COMMUNICATIONS,2016,7.
APA	Timpe, Olaf.,Ding, Feng.,Fu, Qiang.,Willinger, Marc-Georg.,Schloegl, R..,...&Eres, Gyula.(2016).Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging.NATURE COMMUNICATIONS,7.
MLA	Timpe, Olaf,et al."Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging".NATURE COMMUNICATIONS 7(2016).