Nanoimaging of Electronic Heterogeneity in Bi2Se3 and Sb2Te3 Nanocrystals

doi:10.1002/aelm.201700377

	Nanoimaging of Electronic Heterogeneity in Bi2Se3 and Sb2Te3 Nanocrystals
	Lu, Xiaowei 2,3; Khatib, Omar 4,5; Du, Xutao 6; Duan, Jiahua 3,7; Wei, Wei 2; Liu, Xianli 6; Bechtel, Hans A.8; D'Apuzzo, Fausto 8; Yan, Mingtao 2,3; Buyanin, Alexander 1
刊名	ADVANCED ELECTRONIC MATERIALS
	2018
卷号	4 期号:1
关键词	Correlated Imaging Electronic Heterogeneity Mirror Electron Microscopy Scanning Near Field Optical Microscopy Topological Insulator
ISSN号	2199-160X
DOI	10.1002/aelm.201700377
文献子类	Article
英文摘要	Topological insulators (TIs) are quantum materials with topologically protected surface states surrounding an insulating bulk. However, defect-induced bulk conduction often dominates transport properties in most TI materials, obscuring the Dirac surface states. In order to realize intrinsic topological insulating properties, it is thus of great significance to identify the spatial distribution of defects, understand their formation mechanism, and finally control or eliminate their influence. Here, the electronic heterogeneity in polyol-synthesized Bi2Se3 and chemical vapor deposition-grown Sb2Te3 nanocrystals is systematically investigated by multimodal atomic-to-mesoscale resolution imaging. In particular, by combining the Drude response sensitivity of infrared scattering-type scanning near-field optical microscopy with the work-function specificity of mirror electron microscopy, characteristic mesoscopic patterns are identified, which are related to carrier concentration modulation originating from the formation of defects during the crystal growth process. This correlative imaging and modeling approach thus provides the desired guidance for optimization of growth parameters, crucial for preparing TI nanomaterials to display their intrinsic exotic Dirac properties.
WOS关键词	3-DIMENSIONAL TOPOLOGICAL INSULATOR ; SINGLE DIRAC CONE ; PHONON-POLARITONS ; SURFACE-STATES ; SUBWAVELENGTH-SCALE ; GRAPHENE PLASMONS ; BI2TE3 ; MICROSCOPY ; NANOSCOPY ; SPECTROSCOPY
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	WILEY
WOS记录号	WOS:000419670400016
内容类型	期刊论文
源URL	[http://cas-ir.dicp.ac.cn/handle/321008/168516]
专题	大连化学物理研究所_中国科学院大连化学物理研究所
通讯作者	Zeng, Jie; Raschke, Markus B.; Jiang, Peng; Bao, Xinhe
作者单位	1.Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA 2.Chinese Acad Sci, Dalian Inst Chem Phys, CAS Ctr Excellence Nanosci, State Key Lab Catalysis, 457 Zhongshan Rd, Dalian 116023, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Univ Colorado, Dept Chem, Dept Phys, Boulder, CO 80309 USA 5.Univ Colorado, JILA, Boulder, CO 80309 USA 6.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, 96 Jin Zhai Rd, Hefei 230026, Anhui, Peoples R China 7.Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China 8.Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
推荐引用方式 GB/T 7714	Lu, Xiaowei,Khatib, Omar,Du, Xutao,et al. Nanoimaging of Electronic Heterogeneity in Bi2Se3 and Sb2Te3 Nanocrystals[J]. ADVANCED ELECTRONIC MATERIALS,2018,4(1).
APA	Lu, Xiaowei.,Khatib, Omar.,Du, Xutao.,Duan, Jiahua.,Wei, Wei.,...&Bao, Xinhe.(2018).Nanoimaging of Electronic Heterogeneity in Bi2Se3 and Sb2Te3 Nanocrystals.ADVANCED ELECTRONIC MATERIALS,4(1).
MLA	Lu, Xiaowei,et al."Nanoimaging of Electronic Heterogeneity in Bi2Se3 and Sb2Te3 Nanocrystals".ADVANCED ELECTRONIC MATERIALS 4.1(2018).