Stabilization of GaAs photoanodes by in situ deposition of nickel-borate surface catalysts as hole trapping sites

doi:10.1039/c8se00265g

	Stabilization of GaAs photoanodes by in situ deposition of nickel-borate surface catalysts as hole trapping sites
	Jiang, Chaoran 1,3; Wu, Jiang 2,4; Moniz, Savio J. A.1; Guo, Daqian 2; Tang, Mingchu 2; Jiang, Qi 2; Chen, Siming 2; Liu, Huiyun 2; Wang, Aiqin 3; Zhang, Tao 3
刊名	SUSTAINABLE ENERGY & FUELS
	2019-03-01
卷号	3 期号:3 页码:814-822
ISSN号	2398-4902
DOI	10.1039/c8se00265g
通讯作者	Wang, Aiqin(aqwang@dicp.ac.cn) ; Tang, Junwang(junwang.tang@ucl.ac.uk)
英文摘要	Although semiconducting gallium arsenide (GaAs) possesses an ideal band gap for efficient solar-driven fuel synthesis, it is extremely unstable in aqueous media, undergoing facile photocorrosion and therefore is seldom used. We have addressed this stability problem to some extent using a strategy of introducing a Ni-B surface catalyst onto p/n junction GaAs by in situ photoassisted electrodeposition. A monolithic layer of Ni-B/Ga(As)O-x was generated during the Ni-B deposition process, resulting in a Ni-B/Ga(As)O-x/GaAs photoanode structure. Such a structure was optimized by varying the GaAs surface architecture, electrolyte pH value and Ni-B deposition time to achieve optimal photoelectrochemical performance, together with improved stability. The optimized photoanode Ni-B/Ga(As)O-x/shallow GaAs with 0.5 h Ni-B deposition time (approximate to 900 nm thickness of the Ni-B/Ga(As)O-x layer) exhibited a very high photocurrent, leading to a nearly 22 hour stable photocurrent density of 20 mA cm(-2), while bare GaAs exhibits 60% photocurrent loss after three hours under continuous one sun illumination (100 mW cm(-2)) in alkaline media (pH = 14). This remarkable performance in both photocurrent and stability directly addresses the current severe limitations in the application of GaAs photoanodes for solar fuel synthesis, and they may be applicable to other unstable photoelectrodes.
资助项目	China Scholarship Council (CSC)[201308060090] ; EPSRC[EP/N009533/1] ; Leverhulme Trust[RPG-2017-122] ; Newton Advanced Fellowship grant[NA150418]
WOS关键词	OXYGEN-EVOLVING CATALYST ; HYDROGEN-PRODUCTION ; WATER ; PHOTOLYSIS ; FILMS
WOS研究方向	Chemistry ; Energy & Fuels ; Materials Science
语种	英语
出版者	ROYAL SOC CHEMISTRY
WOS记录号	WOS:000467218700015
资助机构	China Scholarship Council (CSC) ; China Scholarship Council (CSC) ; EPSRC ; EPSRC ; Leverhulme Trust ; Leverhulme Trust ; Newton Advanced Fellowship grant ; Newton Advanced Fellowship grant ; China Scholarship Council (CSC) ; China Scholarship Council (CSC) ; EPSRC ; EPSRC ; Leverhulme Trust ; Leverhulme Trust ; Newton Advanced Fellowship grant ; Newton Advanced Fellowship grant ; China Scholarship Council (CSC) ; China Scholarship Council (CSC) ; EPSRC ; EPSRC ; Leverhulme Trust ; Leverhulme Trust ; Newton Advanced Fellowship grant ; Newton Advanced Fellowship grant ; China Scholarship Council (CSC) ; China Scholarship Council (CSC) ; EPSRC ; EPSRC ; Leverhulme Trust ; Leverhulme Trust ; Newton Advanced Fellowship grant ; Newton Advanced Fellowship grant
内容类型	期刊论文
源URL	[http://cas-ir.dicp.ac.cn/handle/321008/165480]
专题	大连化学物理研究所_中国科学院大连化学物理研究所
通讯作者	Wang, Aiqin; Tang, Junwang
作者单位	1.UCL, Dept Chem Engn, Torrington Pl, London WC1E 7JE, England 2.Dept Elect & Elect Engn, Torrington Pl, London WC1E 7JE, England 3.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Peoples R China 4.Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Sichuan, Peoples R China
推荐引用方式 GB/T 7714	Jiang, Chaoran,Wu, Jiang,Moniz, Savio J. A.,et al. Stabilization of GaAs photoanodes by in situ deposition of nickel-borate surface catalysts as hole trapping sites[J]. SUSTAINABLE ENERGY & FUELS,2019,3(3):814-822.
APA	Jiang, Chaoran.,Wu, Jiang.,Moniz, Savio J. A..,Guo, Daqian.,Tang, Mingchu.,...&Tang, Junwang.(2019).Stabilization of GaAs photoanodes by in situ deposition of nickel-borate surface catalysts as hole trapping sites.SUSTAINABLE ENERGY & FUELS,3(3),814-822.
MLA	Jiang, Chaoran,et al."Stabilization of GaAs photoanodes by in situ deposition of nickel-borate surface catalysts as hole trapping sites".SUSTAINABLE ENERGY & FUELS 3.3(2019):814-822.