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	Long-wavelength sige/si mqw resonant-cavity-enhanced photodiodes (rce-pd)
	Yu, JZ; Li, C; Cheng, BW; Wang, QM
刊名	Gettering and defect engineering in semiconductor technology
	2004
卷号	95-96页码:255-260
关键词	Dbr (distributed bragg reflector) Mqw (multiple quantum wells) Optical fiber communication Photodiode Rce-pd (resonant-cavity-enhanced photodiode) Responsivity Sige/si Soi
ISSN号	1012-0394
通讯作者	Yu, jz(jzyu@red.semi.ac.cn)
英文摘要	Si1-xgex/si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. sige/si mqw rce-pd (resonant-cavity-enhanced photodiodes) with different structures were investigated in this work. design and fabrication of top- and bottom-incident rce-pd, such as growth of sige mqw (multiple quantum wells) on si and soi (si on insulator) wafers, bonding between sige epitaxial wafer and sor (surface optical reflector) consisting of sio2/si dbr (distributed bragg reflector) films on si, and performances of rce-pd, were presented. the responsivity of 44ma/w at 1.314 mum and the fwhm of 6nm were obtained at bias of 10v. the highest external quantum efficiency measured in the investigation is 4.2%.
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	TRANS TECH PUBLICATIONS LTD
WOS记录号	WOS:000189347700037
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429462
专题	半导体研究所
通讯作者	Yu, JZ
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Yu, JZ,Li, C,Cheng, BW,et al. Long-wavelength sige/si mqw resonant-cavity-enhanced photodiodes (rce-pd)[J]. Gettering and defect engineering in semiconductor technology,2004,95-96:255-260.
APA	Yu, JZ,Li, C,Cheng, BW,&Wang, QM.(2004).Long-wavelength sige/si mqw resonant-cavity-enhanced photodiodes (rce-pd).Gettering and defect engineering in semiconductor technology,95-96,255-260.
MLA	Yu, JZ,et al."Long-wavelength sige/si mqw resonant-cavity-enhanced photodiodes (rce-pd)".Gettering and defect engineering in semiconductor technology 95-96(2004):255-260.

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