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	1.55 mu m ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror
	Li, CB; Mao, RW; Zuo, YH; Zhao, L; Shi, WH; Luo, LP; Cheng, BW; Yu, JZ; Wang, QM
刊名	Applied physics letters
	2004-10-04
卷号	85期号:14页码:2697-2699
ISSN号	0003-6951
DOI	10.1063/1.1801166
通讯作者	Li, cb(cbli@mail.semi.ac.cn)
英文摘要	A 1.55 mum ge islands resonant-cavity-enhanced (rce) detector with high-reflectivity bottom mirror was fabricated by a simple method. the bottom mirror was deposited in the hole formed by anisotropically etching in a basic solution from the back side of the sample with the buried sio2 layer in silicon-on-insulator substrate as the etch-stop layer. reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2-1.65 mum. the peak responsivity of the rce detector at 1543.8 nm is 0.028 ma/w and a full width at half maximum of 5 nm is obtained. compared with the conventional p-i-n photodetector, the responsivity of rce detector has a nearly threefold enhancement. (c) 2004 american institute of physics.
WOS关键词	WAVE-GUIDE PHOTODETECTOR ; ASSEMBLED QUANTUM DOTS ; MULTILAYER STRUCTURE ; GE/SI(001) ISLANDS ; SUBSTRATE ; EVOLUTION
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000224547300007
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429446
专题	半导体研究所
通讯作者	Li, CB
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Li, CB,Mao, RW,Zuo, YH,et al. 1.55 mu m ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror[J]. Applied physics letters,2004,85(14):2697-2699.
APA	Li, CB.,Mao, RW.,Zuo, YH.,Zhao, L.,Shi, WH.,...&Wang, QM.(2004).1.55 mu m ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror.Applied physics letters,85(14),2697-2699.
MLA	Li, CB,et al."1.55 mu m ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror".Applied physics letters 85.14(2004):2697-2699.

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