| Pressure behavior of te isoelectronic centers in s-rich zns1-xtex alloy | |
| Li, GH; Fang, ZL; Su, FH; Ma, BS; Ding, K; Han, HX; Sou, IK; Ge, WK | |
| 刊名 | Physica status solidi b-basic research
 |
| 2003-02-01 | |
| 卷号 | 235期号:2页码:401-406 |
| ISSN号 | 0370-1972 |
| DOI | 10.1002/pssb.200301592 |
| 通讯作者 | Li, gh() |
| 英文摘要 | The photoluminescence from zns1-xtex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 gpa. two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated te isoelectronic impurities (te-1 centers) and te pairs (te-2 centers), respectively. only the te-2 related emissions were observed in the alloys with 0.01 < x < 0.03. the emissions in the alloys with 0.03 < x < 0.3 are attributed to the excitons bound to the te-n (n greater than or equal to 3) cluster centers. the pressure coefficient of the te-1 related peak is 89(4) mev/gpa, about 40% larger than that of the band gap of zns. on the other hand, the pressure coefficient of the te-2 related emissions is only 52(4) mev/gpa, about 15% smaller than that of the zns band gap. a simple koster-slater model has been used to explain the different pressure behavior of the te-1 and te-2 centers. the pressure coefficient of the te-3 centers is 62(2) mev/gpa. then the pressure coefficients of the te-n centers decrease rapidly with further increasing te composition. |
| WOS关键词 | OPTICAL-ABSORPTION ; ZNS-TE ; TRANSITION ; EDGE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| WOS记录号 | WOS:000181009000034 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2429293 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, GH |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, GH,Fang, ZL,Su, FH,et al. Pressure behavior of te isoelectronic centers in s-rich zns1-xtex alloy[J]. Physica status solidi b-basic research,2003,235(2):401-406. |
| APA | Li, GH.,Fang, ZL.,Su, FH.,Ma, BS.,Ding, K.,...&Ge, WK.(2003).Pressure behavior of te isoelectronic centers in s-rich zns1-xtex alloy.Physica status solidi b-basic research,235(2),401-406. |
| MLA | Li, GH,et al."Pressure behavior of te isoelectronic centers in s-rich zns1-xtex alloy".Physica status solidi b-basic research 235.2(2003):401-406. |
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