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	Interface-related in-plane optical anisotropy in gaas/alxga1-xas single-quantum-well structures studied by reflectance difference spectroscopy
	Chen, YH; Ye, XL; Wang, JZ; Wang, ZG; Yang, Z
刊名	Physical review b
	2002-11-15
卷号	66期号:19页码:5
ISSN号	1098-0121
DOI	10.1103/physrevb.66.195321
通讯作者	Chen, yh()
英文摘要	The in-plane optical anisotropies of a series of gaas/alxga1-xas single-quantum-well structures have been observed at room temperature by reflectance difference spectroscopy. the measured degree of polarization of the excitonic transitions is inversely proportional to the well width. numerical calculations based on the envelope function approximation incorporating the effect of c-2v-interface symmetry have been performed to analyze the origin of the optical anisotropy. good agreement with the experimental data is obtained when the optical anisotropy is attributed to anisotropic-interface structures. the fitted interface potential parameters are consistent with predicted values.
WOS关键词	MOLECULAR-BEAM EPITAXY ; EXCITON LOCALIZATION ; INVERSION ASYMMETRY ; COMMON-ATOM ; LIGHT-HOLE ; HETEROSTRUCTURES ; SUPERLATTICES ; POLARIZATION ; SEGREGATION ; MORPHOLOGY
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
语种	英语
出版者	AMERICAN PHYSICAL SOC
WOS记录号	WOS:000179677900075
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429183
专题	半导体研究所
通讯作者	Chen, YH
作者单位	1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Chen, YH,Ye, XL,Wang, JZ,et al. Interface-related in-plane optical anisotropy in gaas/alxga1-xas single-quantum-well structures studied by reflectance difference spectroscopy[J]. Physical review b,2002,66(19):5.
APA	Chen, YH,Ye, XL,Wang, JZ,Wang, ZG,&Yang, Z.(2002).Interface-related in-plane optical anisotropy in gaas/alxga1-xas single-quantum-well structures studied by reflectance difference spectroscopy.Physical review b,66(19),5.
MLA	Chen, YH,et al."Interface-related in-plane optical anisotropy in gaas/alxga1-xas single-quantum-well structures studied by reflectance difference spectroscopy".Physical review b 66.19(2002):5.

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