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	Pressure behavior of te isoelectronic centers in zns : te
	Fang, ZL; Su, FH; Ma, BS; Ding, K; Han, HX; Li, GH; Sou, IK; Ge, WK
刊名	Applied physics letters
	2002-10-21
卷号	81期号:17页码:3170-3172
ISSN号	0003-6951
DOI	10.1063/1.1517171
通讯作者	Fang, zl()
英文摘要	Zns:te epilayers with te concentration from 0.5% to 3.1% were studied by photoluminescence under hydrostatic pressure at 15 k. two emission bands related to the isolated te-1 and te-2 pair isoelectronic centers were observed in the samples with te concentrations of 0.5% and 0.65%. for the samples with te concentrations of 1.4% and 3.1%, only the te-2-related peak was observed. the pressure coefficients of all the te-1-related bands were found to be unexpectedly much larger than that of the zns band gap. the pressure coefficients for all the te-2-related bands are, however, rather smaller than that of zns band gap as usually observed. analysis based on a koster-slater model indicates that an increase of the valence bandwidth with pressure is the main reason for the faster pressure shift of the te-1 centers, and the huge difference in the pressure behavior of the te-1 and te-2 centers is due mainly to the difference in the pressure-induced enhancement of the impurity potential on the te-1 and te-2 centers. (c) 2002 american institute of physics.
WOS关键词	HYDROSTATIC-PRESSURE ; OPTICAL-ABSORPTION ; BOUND EXCITONS ; ZINC-SULFIDE ; LUMINESCENCE ; PHOTOLUMINESCENCE ; CRYSTALS ; ALLOYS
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000178624900018
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429163
专题	半导体研究所
通讯作者	Fang, ZL
作者单位	1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Fang, ZL,Su, FH,Ma, BS,et al. Pressure behavior of te isoelectronic centers in zns : te[J]. Applied physics letters,2002,81(17):3170-3172.
APA	Fang, ZL.,Su, FH.,Ma, BS.,Ding, K.,Han, HX.,...&Ge, WK.(2002).Pressure behavior of te isoelectronic centers in zns : te.Applied physics letters,81(17),3170-3172.
MLA	Fang, ZL,et al."Pressure behavior of te isoelectronic centers in zns : te".Applied physics letters 81.17(2002):3170-3172.

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