| Investigation of preparation and characterization of gan films on sapphire (0001) substrates | |
| Yang, YG; Ma, HL; Xue, CS; Zhuang, HZ; Hao, XT; Ma, J | |
| 刊名 | Applied surface science
 |
| 2002-12-30 | |
| 卷号 | 202期号:3-4页码:295-300 |
| 关键词 | Gan films Sapphire (0001) substrates Photoluminescence Blue emission |
| ISSN号 | 0169-4332 |
| 通讯作者 | Yang, yg() |
| 英文摘要 | Gallium nitride (gan) films were prepared on sapphire (0001) substrates by post-nitridation technique. xrd. xps. and tem measurement results indicate that the polycrystalline gan with hexagonal wurtzite structure was successfully grown. intense room-temperature photoluminescence peaked at 466 nm of the films is observed. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; GALLIUM NITRIDE ; LOW-TEMPERATURE ; GROWTH |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000180147000019 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2429127 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, YG |
| 作者单位 | 1.Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China 2.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, YG,Ma, HL,Xue, CS,et al. Investigation of preparation and characterization of gan films on sapphire (0001) substrates[J]. Applied surface science,2002,202(3-4):295-300. |
| APA | Yang, YG,Ma, HL,Xue, CS,Zhuang, HZ,Hao, XT,&Ma, J.(2002).Investigation of preparation and characterization of gan films on sapphire (0001) substrates.Applied surface science,202(3-4),295-300. |
| MLA | Yang, YG,et al."Investigation of preparation and characterization of gan films on sapphire (0001) substrates".Applied surface science 202.3-4(2002):295-300. |
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