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	Dependence of optical properties on the structure of multi-layer self-organized inas quantum dots emitting near 1.3 mu m
	Meng, XQ; Xu, B; Jin, P; Ye, XL; Zhang, ZY; Li, CM; Wang, ZG
刊名	Journal of crystal growth
	2002-09-01
卷号	243期号:3-4页码:432-438
关键词	Low dimensional structures Molecular beam epitaxy Quantum dots Semiconducting iii-v materials
ISSN号	0022-0248
通讯作者	Meng, xq()
英文摘要	Self-organized inas quantum dots (qds) have been fabricated by molecular beam epitaxy and characterized by photoluminescence (pl). for both single- and multi-layer qds, pl intensity of the first excited state is larger than that of the ground state at 15 k. conversely, at room temperature (rt), pl intensity of the first excited state is smaller than that of the ground state. this result is explained by the phonon bottleneck effect. to the ground state, the pl intensities of the multi-layer qds are larger than that of the single-layer qds at 15 k, while the intensities are smaller than that of the single-layer qds at rt. this is due to the defects in the multi-layer qd samples acting as the nonradiative recombination centers. the inter-diffusion of ga and in atoms in the growth process of multi-layer qds results in the pl blueshift of the ground state and broadening of the full-width at half-maximum (fwhm), which can be avoided by decreasing the spacers' growth temperature. at the spacers' growth temperature of 520degreesc, we have prepared the 5-layer qds which emit near 1.3 mum with a fwhm of 31.7 mev at rt, and 27.9 mev at 77 k. (c) 2002 published by elsevier science b.v.
WOS关键词	PHOTOLUMINESCENCE
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000177685000010
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429097
专题	半导体研究所
通讯作者	Meng, XQ
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Meng, XQ,Xu, B,Jin, P,et al. Dependence of optical properties on the structure of multi-layer self-organized inas quantum dots emitting near 1.3 mu m[J]. Journal of crystal growth,2002,243(3-4):432-438.
APA	Meng, XQ.,Xu, B.,Jin, P.,Ye, XL.,Zhang, ZY.,...&Wang, ZG.(2002).Dependence of optical properties on the structure of multi-layer self-organized inas quantum dots emitting near 1.3 mu m.Journal of crystal growth,243(3-4),432-438.
MLA	Meng, XQ,et al."Dependence of optical properties on the structure of multi-layer self-organized inas quantum dots emitting near 1.3 mu m".Journal of crystal growth 243.3-4(2002):432-438.

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