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	Effect of rapid thermal annealing on electron emission and dx centers in strained ingaas/gaas single quantum well laser diodes
	Lu, LW; Zhang, YH; Xu, ZT; Xu, ZY; Wang, ZG; Wang, J; Ge, WK
刊名	Journal of crystal growth
	2000-09-01
卷号	218期号:1页码:13-18
关键词	Ingaas/gaas single quantum well Electron emission Dx centers
ISSN号	0022-0248
通讯作者	Lu, lw()
英文摘要	Thermal processing of strained in0.2ga0.8 as/gaas graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. it was found that rapid thermal annealing can improve the 77k photoluminescence efficiency and electron emission from the active layer, due to the removal of nonradiative centers from the ingaas/gaas interface. because of the interdiffusion of al and ga atoms, rapid thermal annealing increases simultaneously the density of dx centers in the algaas graded layer. the current stressing experiments of post-growth and annealed laser diodes are indicative of a corresponding increase in the concentration of dx centers, suggesting that dx centers may be responsible for the degradation of laser diode performance. (c) 2000 elsevier science b.v. all rights reserved.
WOS关键词	CRITICAL LAYER THICKNESS ; EPITAXY
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000089038100003
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428902
专题	半导体研究所
通讯作者	Lu, LW
作者单位	1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Lu, LW,Zhang, YH,Xu, ZT,et al. Effect of rapid thermal annealing on electron emission and dx centers in strained ingaas/gaas single quantum well laser diodes[J]. Journal of crystal growth,2000,218(1):13-18.
APA	Lu, LW.,Zhang, YH.,Xu, ZT.,Xu, ZY.,Wang, ZG.,...&Ge, WK.(2000).Effect of rapid thermal annealing on electron emission and dx centers in strained ingaas/gaas single quantum well laser diodes.Journal of crystal growth,218(1),13-18.
MLA	Lu, LW,et al."Effect of rapid thermal annealing on electron emission and dx centers in strained ingaas/gaas single quantum well laser diodes".Journal of crystal growth 218.1(2000):13-18.

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