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	High-performance strain-compensated ingaas/inalas quantum cascade lasers
	Liu, FQ; Zhang, YZ; Zhang, QS; Ding, D; Xu, B; Wang, ZG; Jiang, DS; Sun, BQ
刊名	Semiconductor science and technology
	2000-12-01
卷号	15期号:12页码:L44-l46
ISSN号	0268-1242
通讯作者	Liu, fq()
英文摘要	We report on the realization of quantum cascade (qc) lasers based on strain-compensated inxga(1-x)as/in(y)a((1-y))as grown on inp substrates using molecular beam epitaxy. x-ray diffraction and cross section transmission electron microscopy have been used to ascertain the quality of the qc laser materials. quasi-continuous wave lasing at lambda approximate to 3.54-3.7 mum at room temperature was achieved. for a laser with 1.6 mm cavity length and 20 mum ridge-waveguide width,quasi-continuous wave lasing at 34 degreesc persists for more than 30 min, with a maximum power of 11.4 mw and threshold current density of 1.2 ka cm(-2), both record values for qc lasers of comparable wavelength.
WOS关键词	MU-M
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000165830800002
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428882
专题	半导体研究所
通讯作者	Liu, FQ
作者单位	1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Liu, FQ,Zhang, YZ,Zhang, QS,et al. High-performance strain-compensated ingaas/inalas quantum cascade lasers[J]. Semiconductor science and technology,2000,15(12):L44-l46.
APA	Liu, FQ.,Zhang, YZ.,Zhang, QS.,Ding, D.,Xu, B.,...&Sun, BQ.(2000).High-performance strain-compensated ingaas/inalas quantum cascade lasers.Semiconductor science and technology,15(12),L44-l46.
MLA	Liu, FQ,et al."High-performance strain-compensated ingaas/inalas quantum cascade lasers".Semiconductor science and technology 15.12(2000):L44-l46.

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