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	X-ray double-crystal characterization of the strain relaxation in gaas/ganxas1-x/gaas(001) sandwiched structures
	Pan, Z; Wang, YT; Li, LH; Zhang, W; Lin, YW; Zhou, ZQ; Wu, RH
刊名	Journal of crystal growth
	2000-07-01
卷号	217期号:1-2页码:26-32
关键词	X-ray diffraction Strain relaxation Ganxas1-x/gaas Photoluminescence Rheed
ISSN号	0022-0248
通讯作者	Pan, z()
英文摘要	An x-ray diffraction method, estimating the strain relaxation in an ultrathin layer, has been discussed by using kinematic and dynamical x-ray diffraction (xrd) theory. the characteristic parameter delta omega, used as the criterion of the strain relaxation in ultrathin layers, is deduced theoretically. it reveals that delta omega should be independent of the layer thickness in a coherently strained layer. by this method, we characterized our ultrathin ganxas1-x samples with n contents up to 5%. xrd measurements show that our ganxas1-x layers are coherently strained on gaas even for such a large amount of n. furthermore, a series of ganxas1-x samples with same n contents but different layer thicknesses were also characterized. it was found that the critical thickness (l-c) of ganas in the gaas/ganas/gaas structures determined by xrd measurement was 10 times smaller than the theoretical predictions based on the matthews and blakeslee model. this result was also confirmed by in situ observation of reflection high-energy electron diffraction (rheed) and photoluminescence (pl) measurements. rheed observation showed that the growth mode of ganas layer changed from 2d- to 3d-mode as the layer thickness exceeded l-c. pl measurements showed that the optical properties of ganas layers deteriorated rapidly as the layer thickness exceeded l-c. (c) 2000 elsevier science b.v. all rights reserved.
WOS关键词	MOLECULAR-BEAM EPITAXY ; TEMPERATURE PULSED OPERATION ; BAND-GAP ENERGY ; NITROGEN ; GAASN ; GANXAS1-X ; GAAS1-XNX ; ALLOYS ; LASERS ; LAYERS
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000088340400003
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428858
专题	半导体研究所
通讯作者	Pan, Z
作者单位	Chinese Acad Sci, State Key Lab Integrated Optoelect, Natl Res Ctr Optoelect Technol, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Pan, Z,Wang, YT,Li, LH,et al. X-ray double-crystal characterization of the strain relaxation in gaas/ganxas1-x/gaas(001) sandwiched structures[J]. Journal of crystal growth,2000,217(1-2):26-32.
APA	Pan, Z.,Wang, YT.,Li, LH.,Zhang, W.,Lin, YW.,...&Wu, RH.(2000).X-ray double-crystal characterization of the strain relaxation in gaas/ganxas1-x/gaas(001) sandwiched structures.Journal of crystal growth,217(1-2),26-32.
MLA	Pan, Z,et al."X-ray double-crystal characterization of the strain relaxation in gaas/ganxas1-x/gaas(001) sandwiched structures".Journal of crystal growth 217.1-2(2000):26-32.

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