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	Photoluminescence and optical quenching of photoconductivity studies on undoped gan grown by molecular beam epitaxy
	Xu, HZ; Wang, ZG; Harrison, I; Bell, A; Ansell, BJ; Winser, AJ; Cheng, TS; Foxon, CT; Kawabe, M
刊名	Journal of crystal growth
	2000-08-01
卷号	217期号:3页码:228-232
关键词	Gan Photoluminescence Optical quenching of photoconductivity Native defect level Molecular beam epitaxy
ISSN号	0022-0248
通讯作者	Kawabe, m()
英文摘要	Deep levels in undoped gan materials grown by modified molecular beam epitaxy (mbe) are investigated by photoluminescence (pl) and optical quenching of photoconductivity measurements. a broad band which extends from 2.1 to 3.0 ev with a maximum at about 2.7 ev is observed, and four prominent quenching bands were found located at 2.18, 2.40, 2.71, and 2.78 ev above the valence band, respectively. these levels are attributed to four holes trap levels existence in the material. the defects cannot be firmly identified at present. (c) 2000 elsevier science b.v, all rights reserved.
WOS关键词	N-TYPE GAN ; DEEP-LEVEL DEFECTS ; YELLOW LUMINESCENCE ; MAGNETIC-RESONANCE ; THIN-FILMS
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000088489400002
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428823
专题	半导体研究所
通讯作者	Kawabe, M
作者单位	1.Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England 4.Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England
推荐引用方式 GB/T 7714	Xu, HZ,Wang, ZG,Harrison, I,et al. Photoluminescence and optical quenching of photoconductivity studies on undoped gan grown by molecular beam epitaxy[J]. Journal of crystal growth,2000,217(3):228-232.
APA	Xu, HZ.,Wang, ZG.,Harrison, I.,Bell, A.,Ansell, BJ.,...&Kawabe, M.(2000).Photoluminescence and optical quenching of photoconductivity studies on undoped gan grown by molecular beam epitaxy.Journal of crystal growth,217(3),228-232.
MLA	Xu, HZ,et al."Photoluminescence and optical quenching of photoconductivity studies on undoped gan grown by molecular beam epitaxy".Journal of crystal growth 217.3(2000):228-232.

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