CORC  > 半导体研究所
Energy bands and acceptor binding energies of gan
Xia, JB; Cheah, KW; Wang, XL; Sun, DZ; Kong, MY
刊名Physical review b
1999-04-15
卷号59期号:15页码:10119-10124
ISSN号1098-0121
通讯作者Xia, jb()
英文摘要The energy bands of zinc-blende and wurtzite gan are calculated with the empirical pseudopotential method, and the pseudopotential parameters for ga and n atoms are-given. the calculated energy bands are in agreement with those obtained by the ab initio method. the effective-mass theory for the semiconductors of wurtzite structure is established, and the effective-mass parameters of gan for both structures are given the binding energies of acceptor states are calculated by solving strictly the effective-mass equations. the binding energies of donor and acceptor are 24 and 142 mev for the zinc-blende structure, 20 and 131, and 97 mev for the wurtzite structure, respectively, which are consistent with recent experimental results. it is proposed that there are two kinds of acceptor in wurtzite gan. one kind is the general acceptor such as c, which substitutes n, which satisfies the effective-mass theory. the other kind of acceptor includes mg, zn, cd, etc., the binding energy of these accepters is deviated from that given by the effective mass theory. in this report, wurtzite gan is grown by the molecular-beam epitaxy method, and the photoluminescence spectra were measured. three main peaks are assigned to the donor-acceptor transitions from two kinds of accepters. some of the transitions were identified as coming from the cubic phase of gan, which appears randomly within the predominantly hexagonal material. [s0163-1829(99)15915-0].
WOS关键词GALLIUM NITRIDE ; MODEL ; SEMICONDUCTORS ; STATES ; ALN
WOS研究方向Physics
WOS类目Physics, Condensed Matter
语种英语
出版者AMER PHYSICAL SOC
WOS记录号WOS:000079958900084
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2428721
专题半导体研究所
通讯作者Xia, JB
作者单位1.Hong Kong Baptist Univ, Dept Phys, Hong Kong, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Semiconductor Mat Ctr, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Xia, JB,Cheah, KW,Wang, XL,et al. Energy bands and acceptor binding energies of gan[J]. Physical review b,1999,59(15):10119-10124.
APA Xia, JB,Cheah, KW,Wang, XL,Sun, DZ,&Kong, MY.(1999).Energy bands and acceptor binding energies of gan.Physical review b,59(15),10119-10124.
MLA Xia, JB,et al."Energy bands and acceptor binding energies of gan".Physical review b 59.15(1999):10119-10124.
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