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	Intraband absorption in the 8-12 mu m band from si-doped vertically aligned ingaas/gaas quantum-dot superlattice
	Zhuang, QD; Li, JM; Li, HX; Zeng, YP; Pan, L; Chen, YH; Kong, MY; Lin, LY
刊名	Applied physics letters
	1998-12-21
卷号	73期号:25页码:3706-3708
ISSN号	0003-6951
通讯作者	Zhuang, qd()
英文摘要	Normal-incident infrared absorption in the 8-12-mu m-atmospheric spectral window in the ingaas/gaas quantum-dot superlattice is observed. using cross-sectional transmission electron microscopy, we find that the ingaas quantum dots are perfectly vertically aligned in the growth direction (100). under the normal incident radiation, a distinct absorption peaked at 9.9 mu m is observed. this work indicates the potential of this quantum-dot superlattice structure for use as normal-incident infrared imaging focal arrays application without fabricating grating structures. (c) 1998 american institute of physics. [s0003-6951(98)01151-6].
WOS关键词	X-RAY-DIFFRACTION ; INFRARED-ABSORPTION ; SELF-ORGANIZATION ; ISLANDS ; WELL ; SPECTROSCOPY ; TRANSITIONS ; LASERS ; INP
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000077458200027
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428601
专题	半导体研究所
通讯作者	Zhuang, QD
作者单位	Chinese Acad Sci, Inst Semicond, Novel Mat Ctr, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhuang, QD,Li, JM,Li, HX,et al. Intraband absorption in the 8-12 mu m band from si-doped vertically aligned ingaas/gaas quantum-dot superlattice[J]. Applied physics letters,1998,73(25):3706-3708.
APA	Zhuang, QD.,Li, JM.,Li, HX.,Zeng, YP.,Pan, L.,...&Lin, LY.(1998).Intraband absorption in the 8-12 mu m band from si-doped vertically aligned ingaas/gaas quantum-dot superlattice.Applied physics letters,73(25),3706-3708.
MLA	Zhuang, QD,et al."Intraband absorption in the 8-12 mu m band from si-doped vertically aligned ingaas/gaas quantum-dot superlattice".Applied physics letters 73.25(1998):3706-3708.

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