Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case | |
Xu, SJ; Liu, J; Zheng, HZ; Chua, SJ; Li, YX; Cheng, WC; Zhang, PH; Yang, XP | |
刊名 | Physics letters a
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1996-03-11 | |
卷号 | 212期号:1-2页码:97-102 |
ISSN号 | 0375-9601 |
通讯作者 | Xu, sj() |
英文摘要 | Perpendicular transport in a specially designed, doped and weakly coupled gaas/alas superlattice is investigated. a linear current-voltage at a bias within +/-10 mv and a negative differential velocity effect at a bias of about +/-40 mv are observed at low temperatures. the miniband conductance near zero electric field is studied as a function of temperature. it is found that the measured conductance increases slightly as the temperature increases to about 30 k, decreases as the temperature rises from 30 k to 70 k, and then increases strongly above 70 k, indicating the existence of a mobility gap. |
WOS关键词 | NEGATIVE DIFFERENTIAL CONDUCTIVITY ; SEMICONDUCTOR SUPERLATTICES ; ELECTRICAL TRANSPORT ; LOCALIZATION ; CONDUCTANCE |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
出版者 | ELSEVIER SCIENCE BV |
WOS记录号 | WOS:A1996UA24000016 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2428496 |
专题 | 半导体研究所 |
通讯作者 | Xu, SJ |
作者单位 | 1.VIENNA TECH UNIV, INST FESTKORPERELEKT, A-1040 VIENNA, AUSTRIA 2.ACAD SINICA, INST SEMICOND, NATL LAB SUPERLATTICES & MICROSTRUCT, BEIJING 100083, PEOPLES R CHINA |
推荐引用方式 GB/T 7714 | Xu, SJ,Liu, J,Zheng, HZ,et al. Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case[J]. Physics letters a,1996,212(1-2):97-102. |
APA | Xu, SJ.,Liu, J.,Zheng, HZ.,Chua, SJ.,Li, YX.,...&Yang, XP.(1996).Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case.Physics letters a,212(1-2),97-102. |
MLA | Xu, SJ,et al."Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case".Physics letters a 212.1-2(1996):97-102. |
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