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	Electronic properties of zinc-blende gan, aln, and their alloys ga1-xalxn
	Fan, WJ; Li, MF; Chong, TC; Xia, JB
刊名	Journal of applied physics
	1996
卷号	79期号:1页码:188-194
ISSN号	0021-8979
通讯作者	Fan, wj()
英文摘要	The electronic properties of wide-energy gap zinc-blende structure gan, a1n, and their alloys ga(1-x)a1(x)n are investigated using the empirical pseudopotential method. electron and hole effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at gamma and those of the conduction band at gamma and x are obtained for gan and ain, respectively. the energies of gamma, x, l conduction valleys of ga(1-x)a1(x)n alloy versus al fraction x are also calculated. the information will be useful for the design of lattice mismatched heterostructure optoelectronic devices based on these materials in the blue light range application. (c) 1995 american institute of physics.
WOS关键词	GALLIUM NITRIDE ; BAND-GAPS ; PSEUDOPOTENTIAL CALCULATIONS ; ALUMINUM NITRIDE ; SEMICONDUCTORS ; GROWTH ; INSULATORS ; CRYSTALS ; SILICON ; DIAMOND
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:A1996TN21100031
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428493
专题	半导体研究所
通讯作者	Fan, WJ
作者单位	ACAD SINICA, INST SEMICOND, NATL LAB SUPERLATTICES & MICROSTRUCT, BEIJING 100083, PEOPLES R CHINA
推荐引用方式 GB/T 7714	Fan, WJ,Li, MF,Chong, TC,et al. Electronic properties of zinc-blende gan, aln, and their alloys ga1-xalxn[J]. Journal of applied physics,1996,79(1):188-194.
APA	Fan, WJ,Li, MF,Chong, TC,&Xia, JB.(1996).Electronic properties of zinc-blende gan, aln, and their alloys ga1-xalxn.Journal of applied physics,79(1),188-194.
MLA	Fan, WJ,et al."Electronic properties of zinc-blende gan, aln, and their alloys ga1-xalxn".Journal of applied physics 79.1(1996):188-194.

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