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	Effects of ultra-low al alloying in(al) as layer on the formation and evolution of inas/gaas quantum dots
	Zhou, X. L.; Chen, Y. H.; Li, T. F.; Zhou, G. Y.; Zhang, H. Y.; Ye, X. L.; Xu, Bo; Wang, Z. G.
刊名	Journal of applied physics
	2011-05-01
卷号	109期号:9页码:6
ISSN号	0021-8979
DOI	10.1063/1.3580258
通讯作者	Zhou, x. l.(zhouxl06@semi.ac.cn)
英文摘要	We have introduced ultra-low al composition at the two-dimensional to three-dimensional transition stage of inas/gaas quantum dots (qds) formation. two main effects of alas on the qds are revealed: one is to lower the nucleation barrier so as to reduce the critical nucleation thickness of qds, which is demonstrated by a surface kinetic nucleation model. the other is to facilitate the in atoms migration from wetting layer (wl) to qds, which holds some signatures such as both increased qds density and size with increasing alas composition, as well as the peak energy red-shift of photoluminescence spectra. the enhanced in atoms migration from wl to qds is further confirmed via photo-modulated reflectance experiments and energy band calculation, which both demonstrate the reduction of effective wl thickness after alas insertion. the observed effects of alas on qds formation and growth evolution could be explained by the al-alloying effects of inas wetting layer. (c) 2011 american institute of physics. [doi:10.1063/1.3580258]
WOS关键词	SELF-ORGANIZED ISLANDS ; MOLECULAR-BEAM-EPITAXY ; OPTICAL-PROPERTIES ; SURFACES ; EMISSION ; DENSITY ; SIZE
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000290588500109
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428354
专题	半导体研究所
通讯作者	Zhou, X. L.
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhou, X. L.,Chen, Y. H.,Li, T. F.,et al. Effects of ultra-low al alloying in(al) as layer on the formation and evolution of inas/gaas quantum dots[J]. Journal of applied physics,2011,109(9):6.
APA	Zhou, X. L..,Chen, Y. H..,Li, T. F..,Zhou, G. Y..,Zhang, H. Y..,...&Wang, Z. G..(2011).Effects of ultra-low al alloying in(al) as layer on the formation and evolution of inas/gaas quantum dots.Journal of applied physics,109(9),6.
MLA	Zhou, X. L.,et al."Effects of ultra-low al alloying in(al) as layer on the formation and evolution of inas/gaas quantum dots".Journal of applied physics 109.9(2011):6.

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