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Temperature compensation for threshold current and slope efficiency of 1.3 mu m inas/gaas quantum-dot lasers by facet coating design
Xu Peng-Fei1; Yang Tao1; Ji Hai-Ming1; Cao Yu-Lian2; Gu Yong-Xian1; Wang Zhan-Guo1
刊名Chinese physics letters
2011-04-01
卷号28期号:4页码:3
ISSN号0256-307X
DOI10.1088/0256-307x/28/4/044201
通讯作者Xu peng-fei()
英文摘要We demonstrate a technique of temperature compensation for 1.3 mu m inas/gaas quantum-dot (qd) lasers by facet coating design. the key point of the technique is to make sure that the mirror loss of the lasers decreases as the temperature rises. to realize this, we design a type of facet coating by shifting the central wavelength of the facet coating from 1310nm to 1480 nm, whose reflectivity increases as the emission wavelength of the lasers red-shifts. consequently, the laser with the new facet coating exhibits a characteristic temperature doubled in size and a more stable slope efficiency in the temperature range from 10 degrees c to 70 degrees c, compared with the traditional one with a temperature-independent mirror loss.
WOS关键词WELL LASERS ; DEPENDENCE ; DIODE ; GAIN
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
出版者IOP PUBLISHING LTD
WOS记录号WOS:000289195200026
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2428321
专题半导体研究所
通讯作者Xu Peng-Fei
作者单位1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Xu Peng-Fei,Yang Tao,Ji Hai-Ming,et al. Temperature compensation for threshold current and slope efficiency of 1.3 mu m inas/gaas quantum-dot lasers by facet coating design[J]. Chinese physics letters,2011,28(4):3.
APA Xu Peng-Fei,Yang Tao,Ji Hai-Ming,Cao Yu-Lian,Gu Yong-Xian,&Wang Zhan-Guo.(2011).Temperature compensation for threshold current and slope efficiency of 1.3 mu m inas/gaas quantum-dot lasers by facet coating design.Chinese physics letters,28(4),3.
MLA Xu Peng-Fei,et al."Temperature compensation for threshold current and slope efficiency of 1.3 mu m inas/gaas quantum-dot lasers by facet coating design".Chinese physics letters 28.4(2011):3.
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