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	Single neutral excitons confined in asbr3 in situ etched in gaas quantum rings
	Ding, F.1,2; Li, B.3; Akopian, N.4; Perinetti, U.4; Chen, Y. H.2; Peeters, F. M.3; Rastelli, A.1; Zwiller, V.4; Schmidt, O. G.1
刊名	Journal of nanoelectronics and optoelectronics
	2011-03-01
卷号	6期号:1页码:51-57
关键词	Quantum ring Quantum dot Neutral exciton Aharonov bohm effect Gate controlled Selective etching
ISSN号	1555-130X
DOI	10.1166/jno.2011.1132
通讯作者	Ding, f.()
英文摘要	We observe the evolution of single self-assembled semiconductor quantum dots into quantum rings during asbr3 in situ etching. the direct three-dimensional imaging of in(ga)as nanostructures embedded in gaas matrix is demonstrated by selective wet chemical etching combined with atomic force microscopy. single neutral excitons confined in these quantum rings are studied by magnetophotoluminescence. oscillations in the exciton radiative recombination energy and in the emission intensity are observed under an applied magnetic field. further, we demonstrate that the period of the oscillations can be tuned by a gate potential that modifies the exciton confinement. the experimental results, combined with calculations, indicate that the exciton aharonov-bohm effect may account for the observed effects.
WOS关键词	ENERGY-SPECTRA
WOS研究方向	Engineering ; Science & Technology - Other Topics ; Physics
WOS类目	Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied
语种	英语
出版者	AMER SCIENTIFIC PUBLISHERS
WOS记录号	WOS:000290692200005
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428306
专题	半导体研究所
通讯作者	Ding, F.
作者单位	1.IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Univ Antwerp, Dept Fys, B-2020 Antwerp, Belgium 4.Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands
推荐引用方式 GB/T 7714	Ding, F.,Li, B.,Akopian, N.,et al. Single neutral excitons confined in asbr3 in situ etched in gaas quantum rings[J]. Journal of nanoelectronics and optoelectronics,2011,6(1):51-57.
APA	Ding, F..,Li, B..,Akopian, N..,Perinetti, U..,Chen, Y. H..,...&Schmidt, O. G..(2011).Single neutral excitons confined in asbr3 in situ etched in gaas quantum rings.Journal of nanoelectronics and optoelectronics,6(1),51-57.
MLA	Ding, F.,et al."Single neutral excitons confined in asbr3 in situ etched in gaas quantum rings".Journal of nanoelectronics and optoelectronics 6.1(2011):51-57.

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