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	The contributions of composition and strain to the phonon shift in ge1-xsnx alloys
	Su, Shaojian; Wang, Wei; Cheng, Buwen; Hu, Weixuan; Zhang, Guangze; Xue, Chunlai; Zuo, Yuhua; Wang, Qiming
刊名	Solid state communications
	2011-04-01
卷号	151期号:8页码:647-650
关键词	Semiconductors Raman scattering
ISSN号	0038-1098
DOI	10.1016/j.ssc.2011.01.017
通讯作者	Cheng, buwen(cbw@semi.ac.cn)
英文摘要	Strained and relaxed ge1-xsnx alloys grown on si(001) substrates by molecular beam epitaxy have been studied by raman scattering. the compositional dependence of the ge-ge raman mode has been measured to be delta omega(x) = -30.3x cm(-1) for the strained alloys while it is delta omega(x) = -83.1x cm(-1) for the relaxed ones, which are in good agreement with theoretical predictions. the results clearly show that, with the increase of sn concentration, the ge-ge phonon frequency decreases much more slowly in the strained alloys than in the relaxed ones. (c) 2011 elsevier ltd. all rights reserved.
WOS关键词	MOLECULAR-BEAM EPITAXY ; RAMAN FREQUENCIES ; SEMICONDUCTORS ; GE(001)2X1 ; SILICON ; SCATTERING ; GROWTH
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000289584800015
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428221
专题	半导体研究所
通讯作者	Cheng, Buwen
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Su, Shaojian,Wang, Wei,Cheng, Buwen,et al. The contributions of composition and strain to the phonon shift in ge1-xsnx alloys[J]. Solid state communications,2011,151(8):647-650.
APA	Su, Shaojian.,Wang, Wei.,Cheng, Buwen.,Hu, Weixuan.,Zhang, Guangze.,...&Wang, Qiming.(2011).The contributions of composition and strain to the phonon shift in ge1-xsnx alloys.Solid state communications,151(8),647-650.
MLA	Su, Shaojian,et al."The contributions of composition and strain to the phonon shift in ge1-xsnx alloys".Solid state communications 151.8(2011):647-650.

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