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	Size-dependent electroluminescence from si quantum dots embedded in amorphous sic matrix
	Rui, Yunjun1,2,3; Li, Shuxin1,2; Xu, Jun1,2; Song, Chao1,2; Jiang, Xiaofan1,2; Li, Wei1,2; Chen, Kunji1,2; Wang, Qimin4; Zuo, Yuhua4
刊名	Journal of applied physics
	2011-09-15
卷号	110期号:6页码:6
ISSN号	0021-8979
DOI	10.1063/1.3641989
通讯作者	Rui, yunjun()
英文摘要	Si quantum dots (qds) were formed by thermal annealing the hydrogenated amorphous silicon carbide films (a-sic(x):h) with different c/si ratio x, which were controlled by using a different gas ratio r of methane to silane during the deposition process. by adjusting x and post annealing temperature, the qd size can be changed from 1.4 to 4.2 nm accordingly, which was verified by the raman spectra and transmission electron microscopy images. size-dependent electroluminescence (el) was observed, and the el intensity was higher for the sample containing small-sized si qds due to the quantum confinement effect (qce). the el peak energy as a function of the si qds size was in good agreement with a modified effective mass approximation (ema) model. the calculated finite barrier potential of the si qds embedded in sic matrix is 0.4 and 0.8 ev for conduction and valence band, respectively. moreover, the current-voltage properties and the linear relationship between the integrated el intensity and injection current indicate that the carrier transport is dominated by fowler-nordheim tunneling and the el mechanism is originated from the bipolar recombination of electron-hole pairs at si qds. our results demonstrate si qds embedded in amorphous sic matrix has the potential application in si-based light emitting devices and the third-generation solar cells. (c) 2011 american institute of physics. [doi:10.1063/1.3641989]
WOS关键词	SILICON NANOCRYSTALLITES ; LUMINESCENCE ; CONFINEMENT ; PHOTOLUMINESCENCE ; MICROCRYSTALS ; NANOCLUSTERS ; SUPERLATTICE ; MULTILAYERS ; ELECTRONS ; STATES
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000295619300143
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428205
专题	半导体研究所
通讯作者	Rui, Yunjun
作者单位	1.Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China 2.Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China 3.Nanjing Univ Technol, Dept Appl Phys, Nanjing 210009, Peoples R China 4.CAS, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Rui, Yunjun,Li, Shuxin,Xu, Jun,et al. Size-dependent electroluminescence from si quantum dots embedded in amorphous sic matrix[J]. Journal of applied physics,2011,110(6):6.
APA	Rui, Yunjun.,Li, Shuxin.,Xu, Jun.,Song, Chao.,Jiang, Xiaofan.,...&Zuo, Yuhua.(2011).Size-dependent electroluminescence from si quantum dots embedded in amorphous sic matrix.Journal of applied physics,110(6),6.
MLA	Rui, Yunjun,et al."Size-dependent electroluminescence from si quantum dots embedded in amorphous sic matrix".Journal of applied physics 110.6(2011):6.

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