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	Normal incidence p-i-n ge heterojunction photodiodes on si substrate grown by ultrahigh vacuum chemical vapor deposition
	Zhou, Zhiwen1; He, Jingkai1; Wang, Ruichun1; Li, Cheng2; Yu, Jinzhong3
刊名	Optics communications
	2010-09-15
卷号	283期号:18页码:3404-3407
关键词	Germanium Hererojunction Photodiode Tensile strain
ISSN号	0030-4018
DOI	10.1016/j.optcom.2010.04.098
通讯作者	Zhou, zhiwen(zhouzw@sziit.com.cn)
英文摘要	We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. the diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees c without thermal annealing and allowing the integration with standard silicon processes. due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between ge and si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial ge films. the diode with a responsivity of 0.23 a/w at 1.55 mu m wavelength and a bulk dark current density of 10 ma/cm(2) is demonstrated. these diodes with high performances and full compatibility with the cmos processes enable monolithically integrating microphotonics and microelectronics on the same chip. (c) 2010 elsevier b.v. all rights reserved.
WOS关键词	SI(100)
WOS研究方向	Optics
WOS类目	Optics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000280051300007
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428080
专题	半导体研究所
通讯作者	Zhou, Zhiwen
作者单位	1.Shenzhen Inst Informat & Technol, Dept Elect Commun Technol, Shenzhen 518029, Guangdong, Peoples R China 2.Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhou, Zhiwen,He, Jingkai,Wang, Ruichun,et al. Normal incidence p-i-n ge heterojunction photodiodes on si substrate grown by ultrahigh vacuum chemical vapor deposition[J]. Optics communications,2010,283(18):3404-3407.
APA	Zhou, Zhiwen,He, Jingkai,Wang, Ruichun,Li, Cheng,&Yu, Jinzhong.(2010).Normal incidence p-i-n ge heterojunction photodiodes on si substrate grown by ultrahigh vacuum chemical vapor deposition.Optics communications,283(18),3404-3407.
MLA	Zhou, Zhiwen,et al."Normal incidence p-i-n ge heterojunction photodiodes on si substrate grown by ultrahigh vacuum chemical vapor deposition".Optics communications 283.18(2010):3404-3407.

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