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	Role of bi3+ ions for er3+ ions efficient 1.54 mu m light emission in er/bi codoped sio2 thin film prepared by sol-gel method
	Zheng, J.1; Zuo, Y. H.1; Zhang, L. Z.1; Wang, W.1; Xue, C. L.1; Cheng, B. W.1; Yu, J. Z.1; Guo, H. Q.2; Wang, Q. M.1
刊名	Journal of luminescence
	2010-10-01
卷号	130期号:10页码:1760-1763
关键词	Photoluminescence Energy transfer Erbium Bismuth
ISSN号	0022-2313
DOI	10.1016/j.jlumin.2010.04.006
通讯作者	Zheng, j.(zhengjun@semi.ac.cn)
英文摘要	Er/bi codoped sio2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. the bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees c, characterized by x-ray diffraction, and rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. fine structures of the er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (pl) measurement. the pl intensity at 1.54 gm reached maximum at 800 degrees c and decreased dramatically at 1000 degrees c. the pl dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. excitation spectrum measurements further reveal the role of bi3+ ions for er3+ ions near infrared light emission. through sol-gel method and thermal treatment, bi3+ ions can provide a perfect environment for er3+ ion light emission by forming er-bi-si-o complex. furthermore, energy transfer from bi3+ ions to er3+ ions is evidenced and found to be a more efficient way for er3+ ions near infrared emission. this makes the bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared led. (c) 2010 elsevier b.v. all rights reserved.
WOS关键词	PHOTOLUMINESCENCE
WOS研究方向	Optics
WOS类目	Optics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000280621400018
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428031
专题	半导体研究所
通讯作者	Zheng, J.
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Huaqiao Univ, Coll Informat Sci & Technol, Quanzhou 362021, Peoples R China
推荐引用方式 GB/T 7714	Zheng, J.,Zuo, Y. H.,Zhang, L. Z.,et al. Role of bi3+ ions for er3+ ions efficient 1.54 mu m light emission in er/bi codoped sio2 thin film prepared by sol-gel method[J]. Journal of luminescence,2010,130(10):1760-1763.
APA	Zheng, J..,Zuo, Y. H..,Zhang, L. Z..,Wang, W..,Xue, C. L..,...&Wang, Q. M..(2010).Role of bi3+ ions for er3+ ions efficient 1.54 mu m light emission in er/bi codoped sio2 thin film prepared by sol-gel method.Journal of luminescence,130(10),1760-1763.
MLA	Zheng, J.,et al."Role of bi3+ ions for er3+ ions efficient 1.54 mu m light emission in er/bi codoped sio2 thin film prepared by sol-gel method".Journal of luminescence 130.10(2010):1760-1763.

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