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	Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films
	Ying, J.; Zhang, X. W.; Fan, Y. M.; Tan, H. R.; Yin, Z. G.
刊名	Diamond and related materials
	2010-11-01
卷号	19期号:11页码:1371-1376
关键词	Cubic boron nitride Doping Ion beam assisted deposition X-ray photoelectron spectroscopy
ISSN号	0925-9635
DOI	10.1016/j.diamond.2010.08.004
通讯作者	Zhang, x. w.(xwzhang@semi.ac.cn)
英文摘要	We have achieved in-situ si incorporation into cubic boron nitride (c-bn) thin films during ion beam assisted deposition. the effects of silicon incorporation on the composition, structure and electric conductivity of c-bn thin films were investigated by fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy and electrical measurements. the results suggest that the content of the cubic phase remains stable on the whole with the incorporation of si up to a concentration of 3.3 at.%, and the higher si concentrations lead to a gradual change from c-bn to hexagonal boron nitride. it is found that the introduced si atoms only replace b atoms and combine with n atoms to form si-n bonds, and no evidence of the existence of si-b bonds is observed. the resistance of the si-doped c-bn films gradually decreases with increasing si concentration, and the resistivity of the c-bn film with 3.3 at.% si is lowered by two orders of magnitude as compared to undoped samples. (c) 2010 elsevier b.v. all rights reserved.
WOS关键词	RAY PHOTOELECTRON-SPECTROSCOPY ; VAPOR-DEPOSITION ; SI ; NUCLEATION ; GROWTH
WOS研究方向	Materials Science
WOS类目	Materials Science, Multidisciplinary
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000283914200006
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428014
专题	半导体研究所
通讯作者	Zhang, X. W.
作者单位	CAS, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Ying, J.,Zhang, X. W.,Fan, Y. M.,et al. Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films[J]. Diamond and related materials,2010,19(11):1371-1376.
APA	Ying, J.,Zhang, X. W.,Fan, Y. M.,Tan, H. R.,&Yin, Z. G..(2010).Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films.Diamond and related materials,19(11),1371-1376.
MLA	Ying, J.,et al."Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films".Diamond and related materials 19.11(2010):1371-1376.

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