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	Optical properties of mn+ doped gaas
	Zhou, Huiying1,2,3; Qu, Shengchun2; Liao, Shuzhi3; Zhang, Fasheng1; Liu, Junpeng2; Wang, Zhanguo2
刊名	Optoelectronics and advanced materials-rapid communications
	2010-06-01
卷号	4期号:6页码:784-787
关键词	Photoluminescence Ion implantation Manganese Gaas
ISSN号	1842-6573
通讯作者	Zhou, huiying(zhouhy@semi.ac.cn)
英文摘要	Photoluminescence is one of the most useful techniques to obtain information about optoelectronic properties and defect structures of materials. in this work, mn-doped gaas structure materials were prepared by mn+ ion implantation at room temperature into gaas. the implanted samples were subsequently annealed at various temperatures under n-2 atmosphere to recrystallize the samples and remove implant damage. the room temperature and low temperature photoluminescence of mn-doped gaas were investigated, respectively. a strong peak was found for the sample annealed at 950 degrees c for 5 s. transitions near 0.989 ev (1254 nm), 1.155 ev (1074 nm) and 1.329 ev (933nm) were identified and formation of these emissions was analyzed for all prepared samples. this structure material could have myriad applications, including information storage, magneto-optical properties and energy level engineering.
WOS关键词	ION-IMPLANTATION ; SEMICONDUCTORS ; CENTERS ; DOTS
WOS研究方向	Materials Science ; Optics
WOS类目	Materials Science, Multidisciplinary ; Optics
语种	英语
出版者	NATL INST OPTOELECTRONICS
WOS记录号	WOS:000279667300004
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427962
专题	半导体研究所
通讯作者	Zhou, Huiying
作者单位	1.Cent S Univ Forestry & Technol, Comp & Informat Engn Sch, Changsha 410004, Hunan, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Hunan Normal Univ, Dept Phys, Minist Educ, Key Lab Low Dimens Quantum Struct & Quantum Contr, Changsha 410081, Hunan, Peoples R China
推荐引用方式 GB/T 7714	Zhou, Huiying,Qu, Shengchun,Liao, Shuzhi,et al. Optical properties of mn+ doped gaas[J]. Optoelectronics and advanced materials-rapid communications,2010,4(6):784-787.
APA	Zhou, Huiying,Qu, Shengchun,Liao, Shuzhi,Zhang, Fasheng,Liu, Junpeng,&Wang, Zhanguo.(2010).Optical properties of mn+ doped gaas.Optoelectronics and advanced materials-rapid communications,4(6),784-787.
MLA	Zhou, Huiying,et al."Optical properties of mn+ doped gaas".Optoelectronics and advanced materials-rapid communications 4.6(2010):784-787.

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