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	Quantitative strain characterization of sige heterostructures by high-resolution transmission electron microscopy
	Zhao, C. W.1; Xing, Y. M.1; Yu, J. Z.2; Han, G. Q.2
刊名	Physica b-condensed matter
	2010-08-15
卷号	405期号:16页码:3433-3435
关键词	Si/ge heterostructures Strain High-resolution transmission electron Microscopy
ISSN号	0921-4526
DOI	10.1016/j.physb.2010.05.018
通讯作者	Zhao, c. w.(cwzhao@yahoo.com.cn)
英文摘要	We report the quantitative strain characterization in semiconductor heterostructures of silicon-germaniums (si(0.76)geo(0.24)) grown on si substrate by an ultra-high vacuum chemical vapor deposition system. the relaxed sige virtual substrate has been achieved by thermal annealing of the sige film with an inserted ge layer. strain analysis was performed using a combination of high-resolution transmission electron microscopy and geometric phase analysis. (c) 2010 elsevier b.v. all rights reserved.
WOS关键词	EDGE DISLOCATION CORE ; QUANTUM DOTS ; GROWTH ; DISPLACEMENT ; FIELD
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000280542600044
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427929
专题	半导体研究所
通讯作者	Zhao, C. W.
作者单位	1.Inner Mongolia Univ Technol, Coll Sci, Hohhot 010051, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, C. W.,Xing, Y. M.,Yu, J. Z.,et al. Quantitative strain characterization of sige heterostructures by high-resolution transmission electron microscopy[J]. Physica b-condensed matter,2010,405(16):3433-3435.
APA	Zhao, C. W.,Xing, Y. M.,Yu, J. Z.,&Han, G. Q..(2010).Quantitative strain characterization of sige heterostructures by high-resolution transmission electron microscopy.Physica b-condensed matter,405(16),3433-3435.
MLA	Zhao, C. W.,et al."Quantitative strain characterization of sige heterostructures by high-resolution transmission electron microscopy".Physica b-condensed matter 405.16(2010):3433-3435.

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