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	Inn layers grown by mocvd on srtio3 substrates
	Jia, C. H.; Chen, Y. H.; Zhou, X. L.; Liu, G. H.; Guo, Y.; Liu, X. L.; Yang, S. Y.; Wang, Z. G.
刊名	Journal of crystal growth
	2010-01-15
卷号	312期号:3页码:373-377
关键词	Srtio3 Growth behavior Mocvd Inn
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2009.10.066
通讯作者	Chen, y. h.(yhchen@red.semi.ac.cn)
英文摘要	Epitaxial wurtzite inn thin films have been grown by metal-organic chemical vapor deposition on (1 1 1) srtio3 (sto) substrates. interestingly, twin domain epitaxy induced by the surface reconstruction of sto is observed with the in-plane orientation relationships of [(1) over bar 1 0 0]inn parallel to [<(1)over bar > 1 0]sto and [2 <(1 1)over bar > 0]inn parallel to[<(1)over bar > 1 0]sto, which is helpful to release the strain. the inn films on sto substrates exhibit a strong photoluminescence emission around 0.78 ev. particularly, using sto substrates opens up a possibility to integrate inn with the functional oxides. (c) 2009 elsevier b.v. all rights reserved
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; PHASE EPITAXY ; PRESSURE
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000274312400004
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427920
专题	半导体研究所
通讯作者	Chen, Y. H.
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Jia, C. H.,Chen, Y. H.,Zhou, X. L.,et al. Inn layers grown by mocvd on srtio3 substrates[J]. Journal of crystal growth,2010,312(3):373-377.
APA	Jia, C. H..,Chen, Y. H..,Zhou, X. L..,Liu, G. H..,Guo, Y..,...&Wang, Z. G..(2010).Inn layers grown by mocvd on srtio3 substrates.Journal of crystal growth,312(3),373-377.
MLA	Jia, C. H.,et al."Inn layers grown by mocvd on srtio3 substrates".Journal of crystal growth 312.3(2010):373-377.

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