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	Interplay effects of temperature and injection power on photoluminescence of inas/gaas quantum dot with high and low areal density
	Zhou, X. L.; Chen, Y. H.; Jia, C. H.; Ye, X. L.; Xu, Bo; Wang, Z. G.
刊名	Journal of physics d-applied physics
	2010-12-08
卷号	43期号:48页码:6
ISSN号	0022-3727
DOI	10.1088/0022-3727/43/48/485102
通讯作者	Zhou, x. l.(zhouxl06@semi.ac.cn)
英文摘要	In this report, we have investigated the temperature and injection power dependent photoluminescence in self-assembled inas/gaas quantum dots (qds) systems with low and high areal density, respectively. it was found that, for the high-density samples, state filling effect and abnormal temperature dependence were interacting. in particular, the injection power-induced variations were most obvious at the temperature interval where carriers transfer from small quantum dots (sqds) to large quantum dots (lqds). such interplay effects could be explained by carrier population of sqds relative to lqds, which could be fitted well using a thermal carrier rate equation model. on the other hand, for the low density sample, an abnormal broadening of full width at half maximum (fwhm) was observed at the 15-100 k interval. in addition, the fwhm also broadened with increasing injection power at the whole measured temperature interval. such peculiarities of low density qds could be attributed to the exciton dephasing processes, which is similar to the characteristic of a single quantum dot. the compared interplay effects of high-and low-density qds reflect the difference between an interacting and isolated qds system.
WOS关键词	DEPENDENCE ; SPECTRA
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000284352400006
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427902
专题	半导体研究所
通讯作者	Zhou, X. L.
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhou, X. L.,Chen, Y. H.,Jia, C. H.,et al. Interplay effects of temperature and injection power on photoluminescence of inas/gaas quantum dot with high and low areal density[J]. Journal of physics d-applied physics,2010,43(48):6.
APA	Zhou, X. L.,Chen, Y. H.,Jia, C. H.,Ye, X. L.,Xu, Bo,&Wang, Z. G..(2010).Interplay effects of temperature and injection power on photoluminescence of inas/gaas quantum dot with high and low areal density.Journal of physics d-applied physics,43(48),6.
MLA	Zhou, X. L.,et al."Interplay effects of temperature and injection power on photoluminescence of inas/gaas quantum dot with high and low areal density".Journal of physics d-applied physics 43.48(2010):6.

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