| Self-heating effect on the two-state lasing behaviors in 1.3-mu m inas-gaas quantum-dot lasers | |
| Ji, Hai-Ming1; Yang, Tao1; Cao, Yu-Lian2; Xu, Peng-Fei1; Gu, Yong-Xian1; Wang, Zhan-Guo1 | |
| 刊名 | Japanese journal of applied physics
 |
| 2010 | |
| 卷号 | 49期号:7页码:4 |
| ISSN号 | 0021-4922 |
| DOI | 10.1143/jjap.49.072103 |
| 通讯作者 | Ji, hai-ming() |
| 英文摘要 | Experimental and theoretical study of the self-heating effect on the two-state lasing behaviors in 1.3-mu m self-assembled inas-gaas quantum dot (qd) lasers is presented. lasing spectra under different injected currents, light-current (l-i) curves measured in continuous and pulsed regimes as well as a rate-equation model considering the current heating have been employed to analyze the ground-state (gs) and excited-state (es) lasing processes. we show that the self-heating causes the quenching of the gs lasing and the es lasing by the increased carrier escape rate and the reduced maximum modal gain of gs and es. (c) 2010 the japan society of applied physics |
| WOS关键词 | DEPENDENCE ; WELL |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | JAPAN SOC APPLIED PHYSICS |
| WOS记录号 | WOS:000280383100035 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2427885 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ji, Hai-Ming |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ji, Hai-Ming,Yang, Tao,Cao, Yu-Lian,et al. Self-heating effect on the two-state lasing behaviors in 1.3-mu m inas-gaas quantum-dot lasers[J]. Japanese journal of applied physics,2010,49(7):4. |
| APA | Ji, Hai-Ming,Yang, Tao,Cao, Yu-Lian,Xu, Peng-Fei,Gu, Yong-Xian,&Wang, Zhan-Guo.(2010).Self-heating effect on the two-state lasing behaviors in 1.3-mu m inas-gaas quantum-dot lasers.Japanese journal of applied physics,49(7),4. |
| MLA | Ji, Hai-Ming,et al."Self-heating effect on the two-state lasing behaviors in 1.3-mu m inas-gaas quantum-dot lasers".Japanese journal of applied physics 49.7(2010):4. |
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